Effect of fluorine addition to plasma-enhanced chemical vapor deposition silicon oxide film

S. W. Lim, M. Miyata, T. Naito, Y. Shimogaki, Y. Nakano, K. Tada, H. Komiyama

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

One solution to reduce the time constant of ultra large scale integrated circuit (ULSI) is the use of a low dielectric constant intermetal film like fluorinated silicon oxide (SiOF). We could obtain SiOF films with low dielectric constant as low as 2.6 and good step coverage by adding CF4 to SiH4 and N2O in plasma-enhanced chemical vapor deposition (PECVD) process. To investigate the dielectric constants due to each polarization and the reason for the decrease in the dielectric constant, we used capacitance-voltage (C-V) and ellipsometry measurements, and Kramers-Kronig transformation. The decrease in dielectric constant could not be completely explained by the reduction in ionic and electronic polarization. We could detect silanol groups, Si-OH in the films and their decrease with increasing CF4 flow rate. It is suggested that the main polarization component to decrease dielectric constant is such as orientational polarization. The step coverage of film was improved by adding CF4. It is suggested that the reduction in the sticking probability of films forming species due to the change in surface state improved the step coverage.

Original languageEnglish
Pages (from-to)143-148
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume443
Publication statusPublished - 1997 Jan 1
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: 1996 Dec 21996 Dec 6

Fingerprint

Fluorine
Silicon oxides
Plasma enhanced chemical vapor deposition
silicon oxides
Oxide films
fluorine
oxide films
Permittivity
vapor deposition
permittivity
Polarization
polarization
Ellipsometry
Surface states
time constant
ellipsometry
integrated circuits
Integrated circuits
Capacitance
flow velocity

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lim, S. W., Miyata, M., Naito, T., Shimogaki, Y., Nakano, Y., Tada, K., & Komiyama, H. (1997). Effect of fluorine addition to plasma-enhanced chemical vapor deposition silicon oxide film. Materials Research Society Symposium - Proceedings, 443, 143-148.
Lim, S. W. ; Miyata, M. ; Naito, T. ; Shimogaki, Y. ; Nakano, Y. ; Tada, K. ; Komiyama, H. / Effect of fluorine addition to plasma-enhanced chemical vapor deposition silicon oxide film. In: Materials Research Society Symposium - Proceedings. 1997 ; Vol. 443. pp. 143-148.
@article{e715010db25e4843a5a94358da94e84e,
title = "Effect of fluorine addition to plasma-enhanced chemical vapor deposition silicon oxide film",
abstract = "One solution to reduce the time constant of ultra large scale integrated circuit (ULSI) is the use of a low dielectric constant intermetal film like fluorinated silicon oxide (SiOF). We could obtain SiOF films with low dielectric constant as low as 2.6 and good step coverage by adding CF4 to SiH4 and N2O in plasma-enhanced chemical vapor deposition (PECVD) process. To investigate the dielectric constants due to each polarization and the reason for the decrease in the dielectric constant, we used capacitance-voltage (C-V) and ellipsometry measurements, and Kramers-Kronig transformation. The decrease in dielectric constant could not be completely explained by the reduction in ionic and electronic polarization. We could detect silanol groups, Si-OH in the films and their decrease with increasing CF4 flow rate. It is suggested that the main polarization component to decrease dielectric constant is such as orientational polarization. The step coverage of film was improved by adding CF4. It is suggested that the reduction in the sticking probability of films forming species due to the change in surface state improved the step coverage.",
author = "Lim, {S. W.} and M. Miyata and T. Naito and Y. Shimogaki and Y. Nakano and K. Tada and H. Komiyama",
year = "1997",
month = "1",
day = "1",
language = "English",
volume = "443",
pages = "143--148",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

Lim, SW, Miyata, M, Naito, T, Shimogaki, Y, Nakano, Y, Tada, K & Komiyama, H 1997, 'Effect of fluorine addition to plasma-enhanced chemical vapor deposition silicon oxide film', Materials Research Society Symposium - Proceedings, vol. 443, pp. 143-148.

Effect of fluorine addition to plasma-enhanced chemical vapor deposition silicon oxide film. / Lim, S. W.; Miyata, M.; Naito, T.; Shimogaki, Y.; Nakano, Y.; Tada, K.; Komiyama, H.

In: Materials Research Society Symposium - Proceedings, Vol. 443, 01.01.1997, p. 143-148.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Effect of fluorine addition to plasma-enhanced chemical vapor deposition silicon oxide film

AU - Lim, S. W.

AU - Miyata, M.

AU - Naito, T.

AU - Shimogaki, Y.

AU - Nakano, Y.

AU - Tada, K.

AU - Komiyama, H.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - One solution to reduce the time constant of ultra large scale integrated circuit (ULSI) is the use of a low dielectric constant intermetal film like fluorinated silicon oxide (SiOF). We could obtain SiOF films with low dielectric constant as low as 2.6 and good step coverage by adding CF4 to SiH4 and N2O in plasma-enhanced chemical vapor deposition (PECVD) process. To investigate the dielectric constants due to each polarization and the reason for the decrease in the dielectric constant, we used capacitance-voltage (C-V) and ellipsometry measurements, and Kramers-Kronig transformation. The decrease in dielectric constant could not be completely explained by the reduction in ionic and electronic polarization. We could detect silanol groups, Si-OH in the films and their decrease with increasing CF4 flow rate. It is suggested that the main polarization component to decrease dielectric constant is such as orientational polarization. The step coverage of film was improved by adding CF4. It is suggested that the reduction in the sticking probability of films forming species due to the change in surface state improved the step coverage.

AB - One solution to reduce the time constant of ultra large scale integrated circuit (ULSI) is the use of a low dielectric constant intermetal film like fluorinated silicon oxide (SiOF). We could obtain SiOF films with low dielectric constant as low as 2.6 and good step coverage by adding CF4 to SiH4 and N2O in plasma-enhanced chemical vapor deposition (PECVD) process. To investigate the dielectric constants due to each polarization and the reason for the decrease in the dielectric constant, we used capacitance-voltage (C-V) and ellipsometry measurements, and Kramers-Kronig transformation. The decrease in dielectric constant could not be completely explained by the reduction in ionic and electronic polarization. We could detect silanol groups, Si-OH in the films and their decrease with increasing CF4 flow rate. It is suggested that the main polarization component to decrease dielectric constant is such as orientational polarization. The step coverage of film was improved by adding CF4. It is suggested that the reduction in the sticking probability of films forming species due to the change in surface state improved the step coverage.

UR - http://www.scopus.com/inward/record.url?scp=0030706236&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030706236&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0030706236

VL - 443

SP - 143

EP - 148

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -