Effect of fluorine incorporation on silicon dioxide prepared by high density plasma chemical vapor deposition with SiH4/O 2/NF3 chemistry

Jae Hong Kim, Chai O. Chung, Dongsun Sheen, Yong Sun Sohn, Hyun Chul Sohn, Jin Woong Kim, Sung Wook Park

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The effect fluorine incorporation on properties of silicon dioxide thin films was studied. Fluorine was incorporated into silicon dioxide films during high density plasma chemical vapor deposition (CVD) with SiGH4/O 2/NF3/He gas mixture. The refractive index was measured by using ellipsometry decreased with increasing NF3/O2 flow ratio for both as-deposited and annealed films. It was found from the secondary ion mass spectroscopy and x-ray photoelectron spectroscopy confirmed the behavior of fluorine diffusion and the binding energy for each species in the films.

Original languageEnglish
Pages (from-to)1435-1442
Number of pages8
JournalJournal of Applied Physics
Volume96
Issue number3
DOIs
Publication statusPublished - 2004 Aug 1

Fingerprint

plasma density
fluorine
vapor deposition
chemistry
silicon dioxide
x ray spectroscopy
ellipsometry
gas mixtures
mass spectroscopy
binding energy
photoelectron spectroscopy
refractivity
thin films
ions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kim, Jae Hong ; Chung, Chai O. ; Sheen, Dongsun ; Sohn, Yong Sun ; Sohn, Hyun Chul ; Kim, Jin Woong ; Park, Sung Wook. / Effect of fluorine incorporation on silicon dioxide prepared by high density plasma chemical vapor deposition with SiH4/O 2/NF3 chemistry. In: Journal of Applied Physics. 2004 ; Vol. 96, No. 3. pp. 1435-1442.
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Effect of fluorine incorporation on silicon dioxide prepared by high density plasma chemical vapor deposition with SiH4/O 2/NF3 chemistry. / Kim, Jae Hong; Chung, Chai O.; Sheen, Dongsun; Sohn, Yong Sun; Sohn, Hyun Chul; Kim, Jin Woong; Park, Sung Wook.

In: Journal of Applied Physics, Vol. 96, No. 3, 01.08.2004, p. 1435-1442.

Research output: Contribution to journalArticle

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AB - The effect fluorine incorporation on properties of silicon dioxide thin films was studied. Fluorine was incorporated into silicon dioxide films during high density plasma chemical vapor deposition (CVD) with SiGH4/O 2/NF3/He gas mixture. The refractive index was measured by using ellipsometry decreased with increasing NF3/O2 flow ratio for both as-deposited and annealed films. It was found from the secondary ion mass spectroscopy and x-ray photoelectron spectroscopy confirmed the behavior of fluorine diffusion and the binding energy for each species in the films.

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