Effect of fluorine incorporation on silicon dioxide prepared by high density plasma chemical vapor deposition with SiH4/O 2/NF3 chemistry

Jae Hong Kim, Chai O. Chung, Dongsun Sheen, Yong Sun Sohn, Hyun Chul Sohn, Jin Woong Kim, Sung Wook Park

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The effect fluorine incorporation on properties of silicon dioxide thin films was studied. Fluorine was incorporated into silicon dioxide films during high density plasma chemical vapor deposition (CVD) with SiGH4/O 2/NF3/He gas mixture. The refractive index was measured by using ellipsometry decreased with increasing NF3/O2 flow ratio for both as-deposited and annealed films. It was found from the secondary ion mass spectroscopy and x-ray photoelectron spectroscopy confirmed the behavior of fluorine diffusion and the binding energy for each species in the films.

Original languageEnglish
Pages (from-to)1435-1442
Number of pages8
JournalJournal of Applied Physics
Issue number3
Publication statusPublished - 2004 Aug 1


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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