Effect of fluorine incorporation on silicon dioxide prepared by high density plasma chemical vapor deposition with SiH4/O 2/NF3 chemistry

Jae Hong Kim, Chai O. Chung, Dongsun Sheen, Yong Sun Sohn, Hyun Chul Sohn, Jin Woong Kim, Sung Wook Park

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Abstract

The effect fluorine incorporation on properties of silicon dioxide thin films was studied. Fluorine was incorporated into silicon dioxide films during high density plasma chemical vapor deposition (CVD) with SiGH4/O 2/NF3/He gas mixture. The refractive index was measured by using ellipsometry decreased with increasing NF3/O2 flow ratio for both as-deposited and annealed films. It was found from the secondary ion mass spectroscopy and x-ray photoelectron spectroscopy confirmed the behavior of fluorine diffusion and the binding energy for each species in the films.

Original languageEnglish
Pages (from-to)1435-1442
Number of pages8
JournalJournal of Applied Physics
Volume96
Issue number3
DOIs
Publication statusPublished - 2004 Aug 1

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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