Effect of fluorine on characteristics of shallow trench isolation prepared using high-density plasma chemical vapor deposition including NF₃ chemistry

Physics & Astronomy

• fluorine 62%
• plasma density 59%
• isolation 58%
• chemistry 53%
• vapor deposition 47%
• oxides 38%
• transistors 24%
• random access memory 23%
• metal oxide semiconductors 21%
• traps 15%
• punches 12%
• leakage 8%
• breakdown 8%
• silicon 5%

Engineering & Materials Science

• Plasma density 100%
• Fluorine 85%
• Chemical vapor deposition 72%
• Oxides 53%
• Transistors 26%
• Oxide semiconductors 24%
• Metals 13%
• Data storage equipment 12%
• Silicon 8%