Effect of GaAs surface treatments using HCl or (NH4)2SX solutions on the interfacial bonding states induced by deposition of Au

Min Gu Kang, Hyung-Ho Park

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The chemical bonding nature of the Au/GaAs interface has been investigated using monochromatic X-ray photoelectron spectroscopy (XPS), with an initially different GaAs surface obtained by HCl cleaning or S-passivation. The composition, chemical bonding state, and thickness of the interface were obviously dependent on the preparation of GaAs surface prior to Au-deposition. The interface region of Au/S-passivated GaAs was more uniform than Au/HCl-cleaned GaAs. In particular, surface bonding states such as As - O and As - S prior to Au-deposition were changed to Ga - O and Ga - S bonding due to the energy released from the deposition of Au, resulting in a combination of resultant As and Au. These bonding transitions were observed to occur at As - O/GaAs and As - S/GaAs interfaces. The bonding-layer distributions of the interfaces induced from non-destructive angle-resolved XPS measurements were Au/Au,As - O/As - Au/Ga - O/Ga - As in the Au/HCl-cleaned GaAs, and Au/As - Au/As - S,Ga - S/GaAs in the Au/S-passivated GaAs.

Original languageEnglish
Pages (from-to)437-443
Number of pages7
JournalThin Solid Films
Volume332
Issue number1-2
DOIs
Publication statusPublished - 1998 Nov 2

Fingerprint

surface treatment
Surface treatment
X ray photoelectron spectroscopy
photoelectron spectroscopy
Passivation
cleaning
passivity
gallium arsenide
Cleaning
chemical composition
x rays
preparation
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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abstract = "The chemical bonding nature of the Au/GaAs interface has been investigated using monochromatic X-ray photoelectron spectroscopy (XPS), with an initially different GaAs surface obtained by HCl cleaning or S-passivation. The composition, chemical bonding state, and thickness of the interface were obviously dependent on the preparation of GaAs surface prior to Au-deposition. The interface region of Au/S-passivated GaAs was more uniform than Au/HCl-cleaned GaAs. In particular, surface bonding states such as As - O and As - S prior to Au-deposition were changed to Ga - O and Ga - S bonding due to the energy released from the deposition of Au, resulting in a combination of resultant As and Au. These bonding transitions were observed to occur at As - O/GaAs and As - S/GaAs interfaces. The bonding-layer distributions of the interfaces induced from non-destructive angle-resolved XPS measurements were Au/Au,As - O/As - Au/Ga - O/Ga - As in the Au/HCl-cleaned GaAs, and Au/As - Au/As - S,Ga - S/GaAs in the Au/S-passivated GaAs.",
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Effect of GaAs surface treatments using HCl or (NH4)2SX solutions on the interfacial bonding states induced by deposition of Au. / Kang, Min Gu; Park, Hyung-Ho.

In: Thin Solid Films, Vol. 332, No. 1-2, 02.11.1998, p. 437-443.

Research output: Contribution to journalArticle

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