Abstract
The chemical bonding nature of the Au/GaAs interface has been investigated using monochromatic X-ray photoelectron spectroscopy (XPS), with an initially different GaAs surface obtained by HCl cleaning or S-passivation. The composition, chemical bonding state, and thickness of the interface were obviously dependent on the preparation of GaAs surface prior to Au-deposition. The interface region of Au/S-passivated GaAs was more uniform than Au/HCl-cleaned GaAs. In particular, surface bonding states such as As - O and As - S prior to Au-deposition were changed to Ga - O and Ga - S bonding due to the energy released from the deposition of Au, resulting in a combination of resultant As and Au. These bonding transitions were observed to occur at As - O/GaAs and As - S/GaAs interfaces. The bonding-layer distributions of the interfaces induced from non-destructive angle-resolved XPS measurements were Au/Au,As - O/As - Au/Ga - O/Ga - As in the Au/HCl-cleaned GaAs, and Au/As - Au/As - S,Ga - S/GaAs in the Au/S-passivated GaAs.
| Original language | English |
|---|---|
| Pages (from-to) | 437-443 |
| Number of pages | 7 |
| Journal | Thin Solid Films |
| Volume | 332 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 1998 Nov 2 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Cite this
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Effect of GaAs surface treatments using HCl or (NH4)2SX solutions on the interfacial bonding states induced by deposition of Au. / Kang, Min Gu; Park, Hyung-Ho.
In: Thin Solid Films, Vol. 332, No. 1-2, 02.11.1998, p. 437-443.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effect of GaAs surface treatments using HCl or (NH4)2SX solutions on the interfacial bonding states induced by deposition of Au
AU - Kang, Min Gu
AU - Park, Hyung-Ho
PY - 1998/11/2
Y1 - 1998/11/2
N2 - The chemical bonding nature of the Au/GaAs interface has been investigated using monochromatic X-ray photoelectron spectroscopy (XPS), with an initially different GaAs surface obtained by HCl cleaning or S-passivation. The composition, chemical bonding state, and thickness of the interface were obviously dependent on the preparation of GaAs surface prior to Au-deposition. The interface region of Au/S-passivated GaAs was more uniform than Au/HCl-cleaned GaAs. In particular, surface bonding states such as As - O and As - S prior to Au-deposition were changed to Ga - O and Ga - S bonding due to the energy released from the deposition of Au, resulting in a combination of resultant As and Au. These bonding transitions were observed to occur at As - O/GaAs and As - S/GaAs interfaces. The bonding-layer distributions of the interfaces induced from non-destructive angle-resolved XPS measurements were Au/Au,As - O/As - Au/Ga - O/Ga - As in the Au/HCl-cleaned GaAs, and Au/As - Au/As - S,Ga - S/GaAs in the Au/S-passivated GaAs.
AB - The chemical bonding nature of the Au/GaAs interface has been investigated using monochromatic X-ray photoelectron spectroscopy (XPS), with an initially different GaAs surface obtained by HCl cleaning or S-passivation. The composition, chemical bonding state, and thickness of the interface were obviously dependent on the preparation of GaAs surface prior to Au-deposition. The interface region of Au/S-passivated GaAs was more uniform than Au/HCl-cleaned GaAs. In particular, surface bonding states such as As - O and As - S prior to Au-deposition were changed to Ga - O and Ga - S bonding due to the energy released from the deposition of Au, resulting in a combination of resultant As and Au. These bonding transitions were observed to occur at As - O/GaAs and As - S/GaAs interfaces. The bonding-layer distributions of the interfaces induced from non-destructive angle-resolved XPS measurements were Au/Au,As - O/As - Au/Ga - O/Ga - As in the Au/HCl-cleaned GaAs, and Au/As - Au/As - S,Ga - S/GaAs in the Au/S-passivated GaAs.
UR - http://www.scopus.com/inward/record.url?scp=0032476350&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032476350&partnerID=8YFLogxK
U2 - 10.1016/S0040-6090(98)01204-8
DO - 10.1016/S0040-6090(98)01204-8
M3 - Article
AN - SCOPUS:0032476350
VL - 332
SP - 437
EP - 443
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1-2
ER -