Effect of gas mixing ratio on etch behavior of Y2O3 Thin Films in Cl2/Ar and BCl3/Ar inductively coupled plasmas

Moonkeun Kim, Alexander Efremov, Mun Pyo Hong, Nam Ki Min, Hyung Ho Park, Kyu Ha Baek, Kwang Ho Kwon

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Abstract

This paper reports the results of a model-based analysis of the etch mechanism for the Y2O3 thin films in the Cl2/Ar and BCl3/Ar inductively coupled plasma. It was found that the BCl 3/Ar plasma provides higher etch rate (except the case of pure BCl3 and Cl2 gases) as well as shows the non-monotonic dependence of the etch rate on the Ar mixing ratio. Plasma diagnostics by Langmuir probes indicated the noticeable influence of Ar mixing ratio on electron temperature and total density of positive ions. Using the model-based analysis of plasma chemistry and etch kinetics, it was demonstrated that the behavior of the Y 2O3 etch rate in both gas mixtures generally corresponds to the neutral-flux-limited etch regime of the ion-assisted chemical reaction while the obtained differences cannot be explained assuming the Cl atoms to be the main chemically active species. Probably, in the BCl3-bases plasmas, the etch kinetics is significantly influenced by the BClx radicals.

Original languageEnglish
Article number08JB04
JournalJapanese Journal of Applied Physics
Volume49
Issue number8 PART 2
DOIs
Publication statusPublished - 2010 Aug 1

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All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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