Effect of glass electronic states on carrier dynamics in semiconductor quantum-dot structures

Young Nam Hwang, Cheon Min Kim, Sae Chae Jeoung, Dongho Kim, Seung Han Park

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Ultrafast carrier dynamics of (Formula presented) nanocrystals excited at various photon energies are investigated by femtosecond nonlinear transmission spectroscopy. As the excitation photon energy is decreased, the enhanced bleaching and its rapid recovery of (Formula presented) state are observed with the development of an additional (Formula presented) bleaching and a spectrally broad photoinduced absorption. We have found that the electron trapping into the glass electronic states has significant effect on the carrier dynamics by reducing the carrier densities in both confined and surface states as the photoexcitation energy increases.

Original languageEnglish
Pages (from-to)4496-4499
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume61
Issue number7
DOIs
Publication statusPublished - 2000 Jan 1

Fingerprint

Electronic states
Bleaching
Semiconductor quantum dots
Photons
quantum dots
bleaching
Glass
glass
Photoexcitation
Surface states
electronics
Nanocrystals
Carrier concentration
photons
Spectroscopy
photoexcitation
Recovery
energy
Electrons
nanocrystals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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Effect of glass electronic states on carrier dynamics in semiconductor quantum-dot structures. / Hwang, Young Nam; Kim, Cheon Min; Jeoung, Sae Chae; Kim, Dongho; Park, Seung Han.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 61, No. 7, 01.01.2000, p. 4496-4499.

Research output: Contribution to journalArticle

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AU - Park, Seung Han

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