Effect of growth temperature on the properties of p-type GaN grown by plasma-assisted molecular beam epitaxy

J. M. Myoung, K. H. Shim, O. Gluschenkov, C. Kim, K. Kim, S. Kim, S. G. Bishop

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8 Citations (Scopus)

Abstract

p-type GaN films were grown at two different temperatures, 650 and 700°C, by plasma-assisted molecular beam epitaxy (PAMBE) using a radio frequency (RF) plasma source. High hole concentrations of the order of 1018 cm-3 were achieved for both films without any post-growth treatment. For (0 0 0 2) diffraction from the p-type films grown at 700°C, the full-width at half-maximum (FWHM) of the double-crystal X-ray rocking curve was 7.8 arcmin, the smallest ever reported for p-type GaN films grown on sapphire substrates. The room-temperature photoluminescence (PL) measurements on both films showed that band edge emission at 365 nm dominated the PL spectra of the films grown at 700°C, while emission at 413 nm, associated with deep Mg complexes, dominated those of the films grown at 650°C. The films grown at 700°C showed better crystalline quality and optical properties than those grown at 650°C.

Original languageEnglish
Pages (from-to)241-246
Number of pages6
JournalJournal of Crystal Growth
Volume182
Issue number3-4
DOIs
Publication statusPublished - 1997 Dec

Bibliographical note

Funding Information:
This work was supported by Samsung Electronics Co. Ltd. and the NSF Engineering Research Program (NSF ECD 89-43166).

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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