Effect of heat treatment of diamond films on field emission property

J. Y. Shim, E. J. Chi, H. K. Baik, K. M. Song, S. M. Lee

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

We have investigated structural and electrical properties of the undoped diamond films prepared by hot filament CVD. It is found that after annealing the as-grown diamond films the resistivity increased significantly due to the dehydrogenation confirmed by FTIR. The field emission property of the as-grown diamond films degraded significantly after annealed in nitrogen ambient. The reason for the degradation is discussed by comparing hydrogen bonding with resistivity.

Original languageEnglish
Pages267-268
Number of pages2
Publication statusPublished - 1998 Dec 1
EventProceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC - Asheville, NC, USA
Duration: 1998 Jul 191998 Jul 24

Other

OtherProceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC
CityAsheville, NC, USA
Period98/7/1998/7/24

Fingerprint

diamond films
field emission
heat treatment
electrical resistivity
dehydrogenation
filaments
electrical properties
vapor deposition
degradation
nitrogen
annealing
hydrogen

All Science Journal Classification (ASJC) codes

  • Surfaces and Interfaces

Cite this

Shim, J. Y., Chi, E. J., Baik, H. K., Song, K. M., & Lee, S. M. (1998). Effect of heat treatment of diamond films on field emission property. 267-268. Paper presented at Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC, Asheville, NC, USA, .
Shim, J. Y. ; Chi, E. J. ; Baik, H. K. ; Song, K. M. ; Lee, S. M. / Effect of heat treatment of diamond films on field emission property. Paper presented at Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC, Asheville, NC, USA, .2 p.
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title = "Effect of heat treatment of diamond films on field emission property",
abstract = "We have investigated structural and electrical properties of the undoped diamond films prepared by hot filament CVD. It is found that after annealing the as-grown diamond films the resistivity increased significantly due to the dehydrogenation confirmed by FTIR. The field emission property of the as-grown diamond films degraded significantly after annealed in nitrogen ambient. The reason for the degradation is discussed by comparing hydrogen bonding with resistivity.",
author = "Shim, {J. Y.} and Chi, {E. J.} and Baik, {H. K.} and Song, {K. M.} and Lee, {S. M.}",
year = "1998",
month = "12",
day = "1",
language = "English",
pages = "267--268",
note = "Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC ; Conference date: 19-07-1998 Through 24-07-1998",

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Shim, JY, Chi, EJ, Baik, HK, Song, KM & Lee, SM 1998, 'Effect of heat treatment of diamond films on field emission property', Paper presented at Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC, Asheville, NC, USA, 98/7/19 - 98/7/24 pp. 267-268.

Effect of heat treatment of diamond films on field emission property. / Shim, J. Y.; Chi, E. J.; Baik, H. K.; Song, K. M.; Lee, S. M.

1998. 267-268 Paper presented at Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC, Asheville, NC, USA, .

Research output: Contribution to conferencePaper

TY - CONF

T1 - Effect of heat treatment of diamond films on field emission property

AU - Shim, J. Y.

AU - Chi, E. J.

AU - Baik, H. K.

AU - Song, K. M.

AU - Lee, S. M.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - We have investigated structural and electrical properties of the undoped diamond films prepared by hot filament CVD. It is found that after annealing the as-grown diamond films the resistivity increased significantly due to the dehydrogenation confirmed by FTIR. The field emission property of the as-grown diamond films degraded significantly after annealed in nitrogen ambient. The reason for the degradation is discussed by comparing hydrogen bonding with resistivity.

AB - We have investigated structural and electrical properties of the undoped diamond films prepared by hot filament CVD. It is found that after annealing the as-grown diamond films the resistivity increased significantly due to the dehydrogenation confirmed by FTIR. The field emission property of the as-grown diamond films degraded significantly after annealed in nitrogen ambient. The reason for the degradation is discussed by comparing hydrogen bonding with resistivity.

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M3 - Paper

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Shim JY, Chi EJ, Baik HK, Song KM, Lee SM. Effect of heat treatment of diamond films on field emission property. 1998. Paper presented at Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC, Asheville, NC, USA, .