Abstract
We have investigated structural and electrical properties of the undoped diamond films prepared by hot filament CVD. It is found that after annealing the as-grown diamond films the resistivity increased significantly due to the dehydrogenation confirmed by FTIR. The field emission property of the as-grown diamond films degraded significantly after annealed in nitrogen ambient. The reason for the degradation is discussed by comparing hydrogen bonding with resistivity.
| Original language | English |
|---|---|
| Pages | 267-268 |
| Number of pages | 2 |
| Publication status | Published - 1998 Dec 1 |
| Event | Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC - Asheville, NC, USA Duration: 1998 Jul 19 → 1998 Jul 24 |
Other
| Other | Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC |
|---|---|
| City | Asheville, NC, USA |
| Period | 98/7/19 → 98/7/24 |
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All Science Journal Classification (ASJC) codes
- Surfaces and Interfaces
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Effect of heat treatment of diamond films on field emission property. / Shim, J. Y.; Chi, E. J.; Baik, H. K.; Song, K. M.; Lee, S. M.
1998. 267-268 Paper presented at Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC, Asheville, NC, USA, .Research output: Contribution to conference › Paper
TY - CONF
T1 - Effect of heat treatment of diamond films on field emission property
AU - Shim, J. Y.
AU - Chi, E. J.
AU - Baik, H. K.
AU - Song, K. M.
AU - Lee, S. M.
PY - 1998/12/1
Y1 - 1998/12/1
N2 - We have investigated structural and electrical properties of the undoped diamond films prepared by hot filament CVD. It is found that after annealing the as-grown diamond films the resistivity increased significantly due to the dehydrogenation confirmed by FTIR. The field emission property of the as-grown diamond films degraded significantly after annealed in nitrogen ambient. The reason for the degradation is discussed by comparing hydrogen bonding with resistivity.
AB - We have investigated structural and electrical properties of the undoped diamond films prepared by hot filament CVD. It is found that after annealing the as-grown diamond films the resistivity increased significantly due to the dehydrogenation confirmed by FTIR. The field emission property of the as-grown diamond films degraded significantly after annealed in nitrogen ambient. The reason for the degradation is discussed by comparing hydrogen bonding with resistivity.
UR - http://www.scopus.com/inward/record.url?scp=0032315680&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032315680&partnerID=8YFLogxK
M3 - Paper
AN - SCOPUS:0032315680
SP - 267
EP - 268
ER -