Abstract
We have investigated structural and electrical properties of the undoped diamond films prepared by hot filament CVD. It is found that after annealing the as-grown diamond films the resistivity increased significantly due to the dehydrogenation confirmed by FTIR. The field emission property of the as-grown diamond films degraded significantly after annealed in nitrogen ambient. The reason for the degradation is discussed by comparing hydrogen bonding with resistivity.
| Original language | English |
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| Pages | 267-268 |
| Number of pages | 2 |
| Publication status | Published - 1998 |
| Event | Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC - Asheville, NC, USA Duration: 1998 Jul 19 → 1998 Jul 24 |
Other
| Other | Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC |
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| City | Asheville, NC, USA |
| Period | 98/7/19 → 98/7/24 |
All Science Journal Classification (ASJC) codes
- Surfaces and Interfaces