Effect of heat treatment of diamond films on field emission property

J. Y. Shim, E. J. Chi, H. K. Baik, K. M. Song, S. M. Lee

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

We have investigated structural and electrical properties of the undoped diamond films prepared by hot filament CVD. It is found that after annealing the as-grown diamond films the resistivity increased significantly due to the dehydrogenation confirmed by FTIR. The field emission property of the as-grown diamond films degraded significantly after annealed in nitrogen ambient. The reason for the degradation is discussed by comparing hydrogen bonding with resistivity.

Original languageEnglish
Pages267-268
Number of pages2
Publication statusPublished - 1998
EventProceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC - Asheville, NC, USA
Duration: 1998 Jul 191998 Jul 24

Other

OtherProceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC
CityAsheville, NC, USA
Period98/7/1998/7/24

All Science Journal Classification (ASJC) codes

  • Surfaces and Interfaces

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