Effect of heating rate on the activation energy for crystallization of amorphous Ge2Sb2Te5 thin film

Yunjung Choi, Minsu Jung, Young Kook Lee

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40 Citations (Scopus)

Abstract

The crystallization of the amorphous Ge2Sb2Te 5 film was investigated by in situ electrical sheet resistance measurement. The crystallization start temperature increases logarithmically with heating rate and is equated. The effective activation energy EA of the crystallization is 2.34 eV at slow heating rates below 40°C/min and decreases to 0.49 eV at higher heating rates because of the reduced activation energies for both nucleation and growth of the crystalline face-centered cubic phase by overheating at high heating rates.

Original languageEnglish
Pages (from-to)F17-F19
JournalElectrochemical and Solid-State Letters
Volume12
Issue number7
DOIs
Publication statusPublished - 2009 Aug 28

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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