Effect of heating rate on the activation energy for crystallization of amorphous Ge2Sb2Te5 thin film

Yunjung Choi; Minsu Jung; Young Kook Lee

doi:10.1149/1.3129137

Effect of heating rate on the activation energy for crystallization of amorphous Ge₂Sb₂Te₅ thin film

Yunjung Choi, Minsu Jung, Young Kook Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

48 Citations (Scopus)

Abstract

The crystallization of the amorphous Ge₂Sb₂Te ₅ film was investigated by in situ electrical sheet resistance measurement. The crystallization start temperature increases logarithmically with heating rate and is equated. The effective activation energy E_A of the crystallization is 2.34 eV at slow heating rates below 40°_C/min and decreases to 0.49 eV at higher heating rates because of the reduced activation energies for both nucleation and growth of the crystalline face-centered cubic phase by overheating at high heating rates.

Original language	English
Pages (from-to)	F17-F19
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	7
DOIs	https://doi.org/10.1149/1.3129137
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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@article{b259073bc7f0496785975116253c2ff7,

title = "Effect of heating rate on the activation energy for crystallization of amorphous Ge2Sb2Te5 thin film",

abstract = "The crystallization of the amorphous Ge2Sb2Te 5 film was investigated by in situ electrical sheet resistance measurement. The crystallization start temperature increases logarithmically with heating rate and is equated. The effective activation energy EA of the crystallization is 2.34 eV at slow heating rates below 40°C/min and decreases to 0.49 eV at higher heating rates because of the reduced activation energies for both nucleation and growth of the crystalline face-centered cubic phase by overheating at high heating rates.",

author = "Yunjung Choi and Minsu Jung and Lee, {Young Kook}",

year = "2009",

doi = "10.1149/1.3129137",

language = "English",

volume = "12",

pages = "F17--F19",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "7",

}

TY - JOUR

T1 - Effect of heating rate on the activation energy for crystallization of amorphous Ge2Sb2Te5 thin film

AU - Choi, Yunjung

AU - Jung, Minsu

AU - Lee, Young Kook

PY - 2009

Y1 - 2009

N2 - The crystallization of the amorphous Ge2Sb2Te 5 film was investigated by in situ electrical sheet resistance measurement. The crystallization start temperature increases logarithmically with heating rate and is equated. The effective activation energy EA of the crystallization is 2.34 eV at slow heating rates below 40°C/min and decreases to 0.49 eV at higher heating rates because of the reduced activation energies for both nucleation and growth of the crystalline face-centered cubic phase by overheating at high heating rates.

AB - The crystallization of the amorphous Ge2Sb2Te 5 film was investigated by in situ electrical sheet resistance measurement. The crystallization start temperature increases logarithmically with heating rate and is equated. The effective activation energy EA of the crystallization is 2.34 eV at slow heating rates below 40°C/min and decreases to 0.49 eV at higher heating rates because of the reduced activation energies for both nucleation and growth of the crystalline face-centered cubic phase by overheating at high heating rates.

UR - http://www.scopus.com/inward/record.url?scp=69149096492&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=69149096492&partnerID=8YFLogxK

U2 - 10.1149/1.3129137

DO - 10.1149/1.3129137

M3 - Article

AN - SCOPUS:69149096492

SN - 1099-0062

VL - 12

SP - F17-F19

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 7

ER -

Effect of heating rate on the activation energy for crystallization of amorphous Ge₂Sb₂Te₅ thin film

Abstract

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