The crystallization of the amorphous Ge2Sb2Te 5 film was investigated by in situ electrical sheet resistance measurement. The crystallization start temperature increases logarithmically with heating rate and is equated. The effective activation energy EA of the crystallization is 2.34 eV at slow heating rates below 40°C/min and decreases to 0.49 eV at higher heating rates because of the reduced activation energies for both nucleation and growth of the crystalline face-centered cubic phase by overheating at high heating rates.
|Journal||Electrochemical and Solid-State Letters|
|Publication status||Published - 2009|
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering