Effect of Hf incorporation in solution-processed NiOx based resistive random access memory

Doo Hyun Yoon, Si Joon Kim, Joohye Jung, Seung Jin Heo, Hyun Jae Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Resistive random access memory based on transition metal oxide materials has attracted much recent attention for the development of next-generation non-volatile memory. The Hf:NiOx devices showed driving mode transformation by the Hf content in the system. Unipolar resistive switching was observed at 2% of Hf concentration while a bipolar resistive switching was observed at 10%. Un-stable switching was shown at 30%, and non-stable breakdown was followed by 100%. These variations of I-V characteristics can enhance understanding of resistive switching phenomenon under the material incorporated system.

Original languageEnglish
Article number093508
JournalApplied Physics Letters
Volume104
Issue number9
DOIs
Publication statusPublished - 2014 Mar 17

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random access memory
metal oxides
breakdown
transition metals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Yoon, Doo Hyun ; Kim, Si Joon ; Jung, Joohye ; Heo, Seung Jin ; Kim, Hyun Jae. / Effect of Hf incorporation in solution-processed NiOx based resistive random access memory. In: Applied Physics Letters. 2014 ; Vol. 104, No. 9.
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Effect of Hf incorporation in solution-processed NiOx based resistive random access memory. / Yoon, Doo Hyun; Kim, Si Joon; Jung, Joohye; Heo, Seung Jin; Kim, Hyun Jae.

In: Applied Physics Letters, Vol. 104, No. 9, 093508, 17.03.2014.

Research output: Contribution to journalArticle

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