Effect of Hf incorporation in solution-processed NiOx based resistive random access memory

Doo Hyun Yoon, Si Joon Kim, Joohye Jung, Seung Jin Heo, Hyun Jae Kim

Research output: Contribution to journalArticle

8 Citations (Scopus)


Resistive random access memory based on transition metal oxide materials has attracted much recent attention for the development of next-generation non-volatile memory. The Hf:NiOx devices showed driving mode transformation by the Hf content in the system. Unipolar resistive switching was observed at 2% of Hf concentration while a bipolar resistive switching was observed at 10%. Un-stable switching was shown at 30%, and non-stable breakdown was followed by 100%. These variations of I-V characteristics can enhance understanding of resistive switching phenomenon under the material incorporated system.

Original languageEnglish
Article number093508
JournalApplied Physics Letters
Issue number9
Publication statusPublished - 2014

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Effect of Hf incorporation in solution-processed NiO<sub>x</sub> based resistive random access memory'. Together they form a unique fingerprint.

  • Cite this