Effect of HfO2 and Al2O3 on monolayer MoS2 electronic structure

Amithraj Valsaraj, Jiwon Chang, Leonard F. Register, Sanjay K. Banerjee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Transition metal dichalcogenides (TMDs) are novel, and unlike graphene, gapped 2D materials with unique electrical and optical properties that are being explored for novel device applications. Their 2D nature also makes their properties sensitive to the surrounding environment. For example, a free standing monolayer of MoS2 - which has an experimentally reported direct band gap of Eg ≈ 1.8 eV1 - has a very low reported mobility (μ<3 cm2/(V-s)),2 but exhibits significant enhancement of its mobility (μ∼200 cm2/(V-s)) when superposed with a high-k dielectric like HfO2.3 Here, we study the effect of HfO2 and Al2O3 on monolayer MoS2 using density functional theory (DFT).

Original languageEnglish
Title of host publication72nd Device Research Conference, DRC 2014 - Conference Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages87-88
Number of pages2
ISBN (Print)9781479954056
DOIs
Publication statusPublished - 2014
Event72nd Device Research Conference, DRC 2014 - Santa Barbara, CA, United States
Duration: 2014 Jun 222014 Jun 25

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Conference

Conference72nd Device Research Conference, DRC 2014
Country/TerritoryUnited States
CitySanta Barbara, CA
Period14/6/2214/6/25

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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