In this work, the effect of hole injection into the charge trap layers from channel prior to program operation is investigated in charge trapping (CT) memory with stacked blocking oxide (BO). For efficient hole injection, a (HfO2)X(Al2O3)1−X/SiO2 stacked BO structure is used. The CT memory device with stacked BO shows faster programming and erasing speed compared with single-layered SiO2 BO. The enhanced programming speed is attributed to the enhanced electric field introduced by excess holes injected into SiN charge trap layer. In addition, efficient hole injection from channel produced the widened memory window in CT memory.
|Number of pages||5|
|Journal||Applied Physics A: Materials Science and Processing|
|Publication status||Published - 2016 Mar 1|
Bibliographical noteFunding Information:
Portions of this research were carried out by the support of the IT R&D program of the Korean Ministry of Trade, Industry and Energy (MTIE/KEIT, Project No. 10035320, “Development of novel 3D stacked device and core materials for the next generation flash memory”), the industry–university cooperation project of SK Hynix Semiconductor Inc., and the Brain Korea 21 PLUS (BK 21 PLUS).
© 2016, Springer-Verlag Berlin Heidelberg.
All Science Journal Classification (ASJC) codes
- Materials Science(all)