Effect of high temperature post-annealing of La0.7Sr0.3MnO3 films deposited by radio frequency magnetron sputtering on SiO2/Si substrates heated at low temperature

Sun Gyu Choi, A. Sivasankar Reddy, Byoung Gon Yu, Woo Seok Yang, Sang Hoon Cheon, Hyung-Ho Park

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

La0.7Sr0.3MnO3 thin films were deposited on SiO2/Si substrates by RF magnetron sputtering under different oxygen gas flow rates with a sputtering power of 100 W. During deposition, the substrate was heated at 623 K. To investigate post-annealing effects, the as-deposited La0.7Sr0.3MnO3 thin films were thermal-treated at 973 K for 1 h. The effects of oxygen gas flow rate and post-annealing treatment on the physical properties of the films were systematically studied. X-ray diffraction results show that the growth orientation and crystallinity of the films were greatly affected by the oxygen gas flow rate and substrate heating during deposition. The sheet resistance of the films gradually decreased with increasing oxygen gas flow rate, while the post-annealed films showed the opposite behavior. The temperature coefficient of resistance at 300 K of La0.7Sr0.3MnO3 thin films deposited at an oxygen gas flow rate of 40 sccm decreased from - 2.40%/K to - 1.73%/K after post annealing. The crystalline state of the La0.7Sr0.3MnO3 thin films also affected its electrical properties.

Original languageEnglish
Pages (from-to)4432-4436
Number of pages5
JournalThin Solid Films
Volume518
Issue number15
DOIs
Publication statusPublished - 2010 May 31

Fingerprint

Magnetron sputtering
gas flow
Flow of gases
radio frequencies
magnetron sputtering
flow velocity
Flow rate
Annealing
Oxygen
annealing
oxygen
Substrates
Thin films
thin films
Temperature
Sheet resistance
Sputtering
crystallinity
Electric properties
Physical properties

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Choi, Sun Gyu ; Reddy, A. Sivasankar ; Yu, Byoung Gon ; Yang, Woo Seok ; Cheon, Sang Hoon ; Park, Hyung-Ho. / Effect of high temperature post-annealing of La0.7Sr0.3MnO3 films deposited by radio frequency magnetron sputtering on SiO2/Si substrates heated at low temperature. In: Thin Solid Films. 2010 ; Vol. 518, No. 15. pp. 4432-4436.
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abstract = "La0.7Sr0.3MnO3 thin films were deposited on SiO2/Si substrates by RF magnetron sputtering under different oxygen gas flow rates with a sputtering power of 100 W. During deposition, the substrate was heated at 623 K. To investigate post-annealing effects, the as-deposited La0.7Sr0.3MnO3 thin films were thermal-treated at 973 K for 1 h. The effects of oxygen gas flow rate and post-annealing treatment on the physical properties of the films were systematically studied. X-ray diffraction results show that the growth orientation and crystallinity of the films were greatly affected by the oxygen gas flow rate and substrate heating during deposition. The sheet resistance of the films gradually decreased with increasing oxygen gas flow rate, while the post-annealed films showed the opposite behavior. The temperature coefficient of resistance at 300 K of La0.7Sr0.3MnO3 thin films deposited at an oxygen gas flow rate of 40 sccm decreased from - 2.40{\%}/K to - 1.73{\%}/K after post annealing. The crystalline state of the La0.7Sr0.3MnO3 thin films also affected its electrical properties.",
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Effect of high temperature post-annealing of La0.7Sr0.3MnO3 films deposited by radio frequency magnetron sputtering on SiO2/Si substrates heated at low temperature. / Choi, Sun Gyu; Reddy, A. Sivasankar; Yu, Byoung Gon; Yang, Woo Seok; Cheon, Sang Hoon; Park, Hyung-Ho.

In: Thin Solid Films, Vol. 518, No. 15, 31.05.2010, p. 4432-4436.

Research output: Contribution to journalArticle

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T1 - Effect of high temperature post-annealing of La0.7Sr0.3MnO3 films deposited by radio frequency magnetron sputtering on SiO2/Si substrates heated at low temperature

AU - Choi, Sun Gyu

AU - Reddy, A. Sivasankar

AU - Yu, Byoung Gon

AU - Yang, Woo Seok

AU - Cheon, Sang Hoon

AU - Park, Hyung-Ho

PY - 2010/5/31

Y1 - 2010/5/31

N2 - La0.7Sr0.3MnO3 thin films were deposited on SiO2/Si substrates by RF magnetron sputtering under different oxygen gas flow rates with a sputtering power of 100 W. During deposition, the substrate was heated at 623 K. To investigate post-annealing effects, the as-deposited La0.7Sr0.3MnO3 thin films were thermal-treated at 973 K for 1 h. The effects of oxygen gas flow rate and post-annealing treatment on the physical properties of the films were systematically studied. X-ray diffraction results show that the growth orientation and crystallinity of the films were greatly affected by the oxygen gas flow rate and substrate heating during deposition. The sheet resistance of the films gradually decreased with increasing oxygen gas flow rate, while the post-annealed films showed the opposite behavior. The temperature coefficient of resistance at 300 K of La0.7Sr0.3MnO3 thin films deposited at an oxygen gas flow rate of 40 sccm decreased from - 2.40%/K to - 1.73%/K after post annealing. The crystalline state of the La0.7Sr0.3MnO3 thin films also affected its electrical properties.

AB - La0.7Sr0.3MnO3 thin films were deposited on SiO2/Si substrates by RF magnetron sputtering under different oxygen gas flow rates with a sputtering power of 100 W. During deposition, the substrate was heated at 623 K. To investigate post-annealing effects, the as-deposited La0.7Sr0.3MnO3 thin films were thermal-treated at 973 K for 1 h. The effects of oxygen gas flow rate and post-annealing treatment on the physical properties of the films were systematically studied. X-ray diffraction results show that the growth orientation and crystallinity of the films were greatly affected by the oxygen gas flow rate and substrate heating during deposition. The sheet resistance of the films gradually decreased with increasing oxygen gas flow rate, while the post-annealed films showed the opposite behavior. The temperature coefficient of resistance at 300 K of La0.7Sr0.3MnO3 thin films deposited at an oxygen gas flow rate of 40 sccm decreased from - 2.40%/K to - 1.73%/K after post annealing. The crystalline state of the La0.7Sr0.3MnO3 thin films also affected its electrical properties.

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