Effect of hydration on the properties of lanthanum oxide and lanthanum aluminate thin films

Jin Hyung Jun, Hyo June Kim, Doo Jin Choi

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The properties of lanthanum oxide films and lanthanum aluminate films were investigated after dipping the films in DI-water. The La2O3 film showed rapid dissolution in DI-water and a swift decrease in thickness resulting in an increased leakage current density. The LAO film showed almost no changes in thickness due to the formation of a layer, preventing dissolution. It was revealed that the changes in the films' oxygen contents during the hydration process affected the films' dielectric constants. The LAO films showed better hydration resistance characteristics, which are typically more suitable for conventional semiconductor manufacturing processes.

Original languageEnglish
Pages (from-to)957-960
Number of pages4
JournalCeramics International
Volume34
Issue number4
DOIs
Publication statusPublished - 2008 May 1

Fingerprint

Lanthanum oxides
Lanthanum
Hydration
Thin films
Dissolution
Water
Leakage currents
Oxide films
lanthanum oxide
Permittivity
Current density
Semiconductor materials
Oxygen

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites

Cite this

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Effect of hydration on the properties of lanthanum oxide and lanthanum aluminate thin films. / Jun, Jin Hyung; Kim, Hyo June; Choi, Doo Jin.

In: Ceramics International, Vol. 34, No. 4, 01.05.2008, p. 957-960.

Research output: Contribution to journalArticle

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