The effects of the In content of InSbTe films with various stoichiometries (Sb2 Te2.7, In0.5 Sb2 Te2.9, and In2.6 Sb2 Te2.9) on phase change characteristics were investigated. With increasing incorporation of In atoms into Sb2 Te3, various crystalline phases, i.e., In2 Te3, Sb, and In 3SbTe2, were observed due to the bond energy between the constituent atoms, while only Sb2 Te3 and the Sb 2 Te2 phases were observed in the case of Sb2 Te2.7 and In0.5 Sb2 Te2.9 films. In addition, the shifts in binding energy of the Sb 3d and In 3d peaks in x-ray photoelectron spectra after the annealing treatment were directly related to the amount of incorporated In. The observed changes in electronic structure suggest that the changes in electrical conductivity and crystalline phase are directly related to the extent of In incorporation.
Bibliographical noteFunding Information:
This research was supported by the National Research Project for Phase-Change Random Access Memory Development sponsored by the Korean Ministry of Commerce, Industry, and Energy.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)