Effect of in incorporated into SbTe on phase change characteristics resulting from changes in electronic structure

Moon Hyung Jang, Seung Jong Park, Dong Heok Lim, Sung Jin Park, Mann Ho Cho, Dae Hong Ko, M. Y. Heo, Hyun Chul Sohn, Sang Ok Kim

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19 Citations (Scopus)


The effects of the In content of InSbTe films with various stoichiometries (Sb2 Te2.7, In0.5 Sb2 Te2.9, and In2.6 Sb2 Te2.9) on phase change characteristics were investigated. With increasing incorporation of In atoms into Sb2 Te3, various crystalline phases, i.e., In2 Te3, Sb, and In 3SbTe2, were observed due to the bond energy between the constituent atoms, while only Sb2 Te3 and the Sb 2 Te2 phases were observed in the case of Sb2 Te2.7 and In0.5 Sb2 Te2.9 films. In addition, the shifts in binding energy of the Sb 3d and In 3d peaks in x-ray photoelectron spectra after the annealing treatment were directly related to the amount of incorporated In. The observed changes in electronic structure suggest that the changes in electrical conductivity and crystalline phase are directly related to the extent of In incorporation.

Original languageEnglish
Article number052112
JournalApplied Physics Letters
Issue number5
Publication statusPublished - 2010

Bibliographical note

Funding Information:
This work is supported by Chongqing University, the Fundamental Research Funds for the Central Universities (No. 0241005202014, No. 0903005203403), National Natural Science Foundation of China (No. 51572182, No. 11372104, No. 11372363, No. 11332013, No. 5121543 and No. 11632004), National University of Singapore, the National Research Foundation, Prime Minister's Office, Singapore under its Competitive Research Programme (CRP Award No. NRF-CRP 8-2011-04), as well as Russian Science Foundation (Project 14-43-00072).

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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