Abstract
The effects of plasma nitridation conditions, including substrate temperature (room temperature or high temperature) and plasma source gas (N2 or NH3), on the energy band characteristics and the chemical states of ultrathin SiON films was studied by using reflection electron energy loss spectroscopy (REELS) and X-ray photoelectron spectroscopy (XPS). The depth profile of nitrogen incorporated in the SiON films as a function of the above conditions was examined using mediumenergy ion scattering (MEIS). The decrease in the band gap caused by nitridation was enhanced to a greater extent at high substrate temperature and by using a N2 plasma. The profile for N incorporation indicated that the change in band gap was directly related to the quantity of N in the SiON film. These characteristics are strongly related to the chemical state of the occupied N 2p state in SiON.
| Original language | English |
|---|---|
| Pages (from-to) | 1169-1173 |
| Number of pages | 5 |
| Journal | Journal of the Korean Physical Society |
| Volume | 58 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2011 May 13 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Effect of incorporated nitrogen on the band alignment of ultrathin silicon-oxynitride films as a function of the plasma nitridation conditions. / Yim, C. J.; Ko, D. H.; Park, S. H.; Lee, W. J.; Cho, M. H.
In: Journal of the Korean Physical Society, Vol. 58, No. 5, 13.05.2011, p. 1169-1173.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effect of incorporated nitrogen on the band alignment of ultrathin silicon-oxynitride films as a function of the plasma nitridation conditions
AU - Yim, C. J.
AU - Ko, D. H.
AU - Park, S. H.
AU - Lee, W. J.
AU - Cho, M. H.
PY - 2011/5/13
Y1 - 2011/5/13
N2 - The effects of plasma nitridation conditions, including substrate temperature (room temperature or high temperature) and plasma source gas (N2 or NH3), on the energy band characteristics and the chemical states of ultrathin SiON films was studied by using reflection electron energy loss spectroscopy (REELS) and X-ray photoelectron spectroscopy (XPS). The depth profile of nitrogen incorporated in the SiON films as a function of the above conditions was examined using mediumenergy ion scattering (MEIS). The decrease in the band gap caused by nitridation was enhanced to a greater extent at high substrate temperature and by using a N2 plasma. The profile for N incorporation indicated that the change in band gap was directly related to the quantity of N in the SiON film. These characteristics are strongly related to the chemical state of the occupied N 2p state in SiON.
AB - The effects of plasma nitridation conditions, including substrate temperature (room temperature or high temperature) and plasma source gas (N2 or NH3), on the energy band characteristics and the chemical states of ultrathin SiON films was studied by using reflection electron energy loss spectroscopy (REELS) and X-ray photoelectron spectroscopy (XPS). The depth profile of nitrogen incorporated in the SiON films as a function of the above conditions was examined using mediumenergy ion scattering (MEIS). The decrease in the band gap caused by nitridation was enhanced to a greater extent at high substrate temperature and by using a N2 plasma. The profile for N incorporation indicated that the change in band gap was directly related to the quantity of N in the SiON film. These characteristics are strongly related to the chemical state of the occupied N 2p state in SiON.
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U2 - 10.3938/jkps.58.1169
DO - 10.3938/jkps.58.1169
M3 - Article
AN - SCOPUS:79957697357
VL - 58
SP - 1169
EP - 1173
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - 5
ER -