Effect of incorporated nitrogen on the band alignment of ultrathin silicon-oxynitride films as a function of the plasma nitridation conditions

C. J. Yim, D. H. Ko, S. H. Park, W. J. Lee, M. H. Cho

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The effects of plasma nitridation conditions, including substrate temperature (room temperature or high temperature) and plasma source gas (N2 or NH3), on the energy band characteristics and the chemical states of ultrathin SiON films was studied by using reflection electron energy loss spectroscopy (REELS) and X-ray photoelectron spectroscopy (XPS). The depth profile of nitrogen incorporated in the SiON films as a function of the above conditions was examined using mediumenergy ion scattering (MEIS). The decrease in the band gap caused by nitridation was enhanced to a greater extent at high substrate temperature and by using a N2 plasma. The profile for N incorporation indicated that the change in band gap was directly related to the quantity of N in the SiON film. These characteristics are strongly related to the chemical state of the occupied N 2p state in SiON.

Original languageEnglish
Pages (from-to)1169-1173
Number of pages5
JournalJournal of the Korean Physical Society
Volume58
Issue number5
DOIs
Publication statusPublished - 2011 May 13

Fingerprint

oxynitrides
alignment
nitrogen
silicon
ion scattering
profiles
energy bands
temperature
energy dissipation
photoelectron spectroscopy
electron energy
room temperature
gases
spectroscopy
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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title = "Effect of incorporated nitrogen on the band alignment of ultrathin silicon-oxynitride films as a function of the plasma nitridation conditions",
abstract = "The effects of plasma nitridation conditions, including substrate temperature (room temperature or high temperature) and plasma source gas (N2 or NH3), on the energy band characteristics and the chemical states of ultrathin SiON films was studied by using reflection electron energy loss spectroscopy (REELS) and X-ray photoelectron spectroscopy (XPS). The depth profile of nitrogen incorporated in the SiON films as a function of the above conditions was examined using mediumenergy ion scattering (MEIS). The decrease in the band gap caused by nitridation was enhanced to a greater extent at high substrate temperature and by using a N2 plasma. The profile for N incorporation indicated that the change in band gap was directly related to the quantity of N in the SiON film. These characteristics are strongly related to the chemical state of the occupied N 2p state in SiON.",
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TY - JOUR

T1 - Effect of incorporated nitrogen on the band alignment of ultrathin silicon-oxynitride films as a function of the plasma nitridation conditions

AU - Yim, C. J.

AU - Ko, D. H.

AU - Park, S. H.

AU - Lee, W. J.

AU - Cho, M. H.

PY - 2011/5/13

Y1 - 2011/5/13

N2 - The effects of plasma nitridation conditions, including substrate temperature (room temperature or high temperature) and plasma source gas (N2 or NH3), on the energy band characteristics and the chemical states of ultrathin SiON films was studied by using reflection electron energy loss spectroscopy (REELS) and X-ray photoelectron spectroscopy (XPS). The depth profile of nitrogen incorporated in the SiON films as a function of the above conditions was examined using mediumenergy ion scattering (MEIS). The decrease in the band gap caused by nitridation was enhanced to a greater extent at high substrate temperature and by using a N2 plasma. The profile for N incorporation indicated that the change in band gap was directly related to the quantity of N in the SiON film. These characteristics are strongly related to the chemical state of the occupied N 2p state in SiON.

AB - The effects of plasma nitridation conditions, including substrate temperature (room temperature or high temperature) and plasma source gas (N2 or NH3), on the energy band characteristics and the chemical states of ultrathin SiON films was studied by using reflection electron energy loss spectroscopy (REELS) and X-ray photoelectron spectroscopy (XPS). The depth profile of nitrogen incorporated in the SiON films as a function of the above conditions was examined using mediumenergy ion scattering (MEIS). The decrease in the band gap caused by nitridation was enhanced to a greater extent at high substrate temperature and by using a N2 plasma. The profile for N incorporation indicated that the change in band gap was directly related to the quantity of N in the SiON film. These characteristics are strongly related to the chemical state of the occupied N 2p state in SiON.

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