Effect of indium composition ratio on solution-processed nanocrystalline InGaZnO thin film transistors

Gun Hee Kim, Byung Du Ahn, Hyun Soo Shin, Hee Jeong Woong, Hee Jin Kim, Heon Je Kim

Research output: Contribution to journalArticle

184 Citations (Scopus)
Original languageEnglish
JournalApplied Physics Letters
Volume94
Issue number23
Publication statusPublished - 2009 Jun

Cite this

Kim, Gun Hee ; Du Ahn, Byung ; Shin, Hyun Soo ; Woong, Hee Jeong ; Kim, Hee Jin ; Kim, Heon Je. / Effect of indium composition ratio on solution-processed nanocrystalline InGaZnO thin film transistors. In: Applied Physics Letters. 2009 ; Vol. 94, No. 23.
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Effect of indium composition ratio on solution-processed nanocrystalline InGaZnO thin film transistors. / Kim, Gun Hee; Du Ahn, Byung; Shin, Hyun Soo; Woong, Hee Jeong; Kim, Hee Jin; Kim, Heon Je.

In: Applied Physics Letters, Vol. 94, No. 23, 06.2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of indium composition ratio on solution-processed nanocrystalline InGaZnO thin film transistors

AU - Kim, Gun Hee

AU - Du Ahn, Byung

AU - Shin, Hyun Soo

AU - Woong, Hee Jeong

AU - Kim, Hee Jin

AU - Kim, Heon Je

PY - 2009/6

Y1 - 2009/6

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VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

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