Using a variety of various physical measurements, the effects of postnitridation annealing using NH3 vapor on the interface between atomic-layer-deposited HfO2 films and n -GaAs (100) substrates were investigated. After the nitridation treatment, from x-ray absorption spectroscopy and high resolution x-ray photoemission spectroscopy data indicate that the incorporation of Ga oxides into HfO2 films was significantly suppressed during the annealing treatment, primarily because of chemical reactions at the interface between Ga2 O3 and NH 3. Microstructural analyses further confirmed that the HfO 2 film was fully crystallized and a thin GaOx N y layer had been formed at the HfO2 /GaAs interface during the annealing process. Compared with the energy band alignments before and after the annealing process, the valence band offsets and energy band gaps were not changed substantially, because the interfacial nitride layer effectively blocked the diffusion of Ga oxide into the film.
Bibliographical noteFunding Information:
The study for high resolution x-ray photoelectron spectroscopy is coadministered with Dr. J. W. Lee of KBSI in Jeonju. This work was partly supported by a grant from the “Next-generation Substrate technology for high performance semiconductor devices” (Grant No. KI002083) of the IT R&D program of MKE/KEIT of Korea and the Joint Program for Samsung Electronics–Yonsei University.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)