Effect of interfacial SiO2−y layer and defect in HfO2−x film on flat-band voltage of HfO2−x/SiO2−y stacks for backside-illuminated CMOS image sensors

Heedo Na, Jimin Lee, Juyoung Jeong, Taeho Kim, Hyunchul Sohn

Research output: Contribution to journalArticle

Abstract

In this study, the effect of oxygen gas fraction during deposition of a hafnium oxide (HfO2−x) film and the influence of the quality of the SiO2−y interlayer on the nature of flat-band voltage (Vfb) in TiN/HfO/SiO2−y/p-Si structures were investigated. X-ray photoemission spectroscopy analysis showed that the non-lattice oxygen peak, indicating an existing oxygen vacancy, increased as the oxygen gas fraction decreased during sputtering. From C–V and J–E analyses, the Vfb behavior was significantly affected by the characteristics of the SiO2−y interlayer and the non-lattice oxygen fraction in the HfO2−x films. The HfO2−x/native SiO2−y stack presented a Vfb of − 1.01 V for HfO2−x films with an oxygen gas fraction of 5% during sputtering. Additionally, the Vfb of the HfO2−x/native SiO2−y stack could be controlled from − 1.01 to − 0.56 V by changing the deposition conditions of the HfO2−x film with the native SiO2−y interlayer. The findings of this study can be useful to fabricate charge-accumulating layers for backside-illuminated image sensor devices.

Original languageEnglish
Article number259
JournalApplied Physics A: Materials Science and Processing
Volume124
Issue number3
DOIs
Publication statusPublished - 2018 Mar 1

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Image sensors
Oxygen
Defects
Electric potential
Gases
Sputtering
Hafnium oxides
Oxygen vacancies
Photoelectron spectroscopy
X ray spectroscopy
Oxide films

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

Cite this

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title = "Effect of interfacial SiO2−y layer and defect in HfO2−x film on flat-band voltage of HfO2−x/SiO2−y stacks for backside-illuminated CMOS image sensors",
abstract = "In this study, the effect of oxygen gas fraction during deposition of a hafnium oxide (HfO2−x) film and the influence of the quality of the SiO2−y interlayer on the nature of flat-band voltage (Vfb) in TiN/HfO/SiO2−y/p-Si structures were investigated. X-ray photoemission spectroscopy analysis showed that the non-lattice oxygen peak, indicating an existing oxygen vacancy, increased as the oxygen gas fraction decreased during sputtering. From C–V and J–E analyses, the Vfb behavior was significantly affected by the characteristics of the SiO2−y interlayer and the non-lattice oxygen fraction in the HfO2−x films. The HfO2−x/native SiO2−y stack presented a Vfb of − 1.01 V for HfO2−x films with an oxygen gas fraction of 5{\%} during sputtering. Additionally, the Vfb of the HfO2−x/native SiO2−y stack could be controlled from − 1.01 to − 0.56 V by changing the deposition conditions of the HfO2−x film with the native SiO2−y interlayer. The findings of this study can be useful to fabricate charge-accumulating layers for backside-illuminated image sensor devices.",
author = "Heedo Na and Jimin Lee and Juyoung Jeong and Taeho Kim and Hyunchul Sohn",
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AU - Na, Heedo

AU - Lee, Jimin

AU - Jeong, Juyoung

AU - Kim, Taeho

AU - Sohn, Hyunchul

PY - 2018/3/1

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