Effect of interposed Cr layer on the thermal stability of Cu/Ta/Si structure

Dong Soo Yoon, Hong Koo Baik, Byoung Sun Kang, Sung Man Lee

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

The thermal stability of Cu/Ta/Cr/Si structure is analyzed and compared with that of Cu/Ta/Si and Cu/Ta/Cr/Ta/Si structures. The Cu/Ta/Si and Cu/Ta/Cr/Ta/Si systems retained their structures up to 600 °C without increase in resistivity but the Cu/Ta/Cr/Si structure was degraded after annealing at 400 °C. In the latter case, the degradation was dominated by the outdiffusion of free Si, probably released from the substrate in the formation of CrSi2. It is suggested that the released Si is reactive and its outdiffusion through Ta layer is facilitated by the high affinity of Si toward Ta, as expected from the large negative value of mixing enthalpy between Ta and Si.

Original languageEnglish
Pages (from-to)6550-6552
Number of pages3
JournalJournal of Applied Physics
Volume80
Issue number11
DOIs
Publication statusPublished - 1996 Dec 1

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affinity
thermal stability
enthalpy
degradation
electrical resistivity
annealing

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Yoon, Dong Soo ; Baik, Hong Koo ; Kang, Byoung Sun ; Lee, Sung Man. / Effect of interposed Cr layer on the thermal stability of Cu/Ta/Si structure. In: Journal of Applied Physics. 1996 ; Vol. 80, No. 11. pp. 6550-6552.
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Effect of interposed Cr layer on the thermal stability of Cu/Ta/Si structure. / Yoon, Dong Soo; Baik, Hong Koo; Kang, Byoung Sun; Lee, Sung Man.

In: Journal of Applied Physics, Vol. 80, No. 11, 01.12.1996, p. 6550-6552.

Research output: Contribution to journalArticle

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AU - Baik, Hong Koo

AU - Kang, Byoung Sun

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