The electrical properties of La-doped ZrO2 thin films were studied for an application to cell capacitors in dynamic random-access memory. La-doped ZrO2 thin films were deposited by changing the ratio of ZrO2:La2O3 cycles using atomic layer deposition. Grazing-incidence X-ray diffraction analysis showed that the La-doped ZrO2 thin films had a tetragonal structure. The tetragonality (c/a) of La-doped ZrO2 thin films increased from 1.41 in undoped ZrO2 to 1.43 in La-doped ZrO2 with a 7.5% La content. X-ray photoelectron spectroscopy showed that the concentration of oxygen vacancies in ZrO2 thin films increased with increasing La concentration. The dielectric constant of La-doped ZrO2 was increased by 15% from 37 in undoped ZrO2 to 43 at a La doping concentration of 7.5%, and the leakage current was also improved. Therefore, La-doped ZrO2 thin films are expected to be an excellent candidate material for dynamic random-access memory cell capacitors owing to their high dielectric constant and low leakage current.
|Journal||Journal of Alloys and Compounds|
|Publication status||Published - 2022 Dec 15|
Bibliographical noteFunding Information:
This work was supported by the industry-university cooperation project of SK hynix .
© 2022 Elsevier B.V.
All Science Journal Classification (ASJC) codes
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry