Effect of La3+ substitution with Gd3+ on the resistive switching properties of La0.7Sr0.3MnO 3 thin films

Hong Sub Lee, Chang Sun Park, Hyung Ho Park

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)


This study demonstrated that the resistive switching voltage of perovskite manganite material could be controlled by A-site cation substitution in "A" MnO3 perovskite manganite structure. A partial substitution of La3+ in La0.7Sr0.3MnO 3 with smaller cation Gd3+ induced A-site vacancy of the largest Sr2+ cation with surface segregation of SrOy due to ionic size mismatch, and the induced vacancies reduced migration energy barrier. The operating voltage decreased from 3.5 V to 2.5 V due to a favorable condition for electrochemical migration and redox of oxygen ions. Moreover, surface-segregated SrOy was enhanced with Gd-substitution and the SrOy reduced Schottky-like barrier height and resistive switching ratio from the potential drop and screening effect. The relationship between A-site vacancy generation resulting in surface segregation of SrOy and resistive switching behavior was also investigated by energy resolved x-ray photoelectron spectroscopy, O 1s near edge x-ray absorption spectroscopy, and current voltage measurement.

Original languageEnglish
Article number191604
JournalApplied Physics Letters
Issue number19
Publication statusPublished - 2014 May 12

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Effect of La<sup>3+</sup> substitution with Gd<sup>3+</sup> on the resistive switching properties of La<sub>0.7</sub>Sr<sub>0.3</sub>MnO <sub>3</sub> thin films'. Together they form a unique fingerprint.

Cite this