Effect of La3+ substitution with Gd3+ on the resistive switching properties of La0.7Sr0.3MnO 3 thin films

Hong Sub Lee, Chang Sun Park, Hyung Ho Park

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Abstract

This study demonstrated that the resistive switching voltage of perovskite manganite material could be controlled by A-site cation substitution in "A" MnO3 perovskite manganite structure. A partial substitution of La3+ in La0.7Sr0.3MnO 3 with smaller cation Gd3+ induced A-site vacancy of the largest Sr2+ cation with surface segregation of SrOy due to ionic size mismatch, and the induced vacancies reduced migration energy barrier. The operating voltage decreased from 3.5 V to 2.5 V due to a favorable condition for electrochemical migration and redox of oxygen ions. Moreover, surface-segregated SrOy was enhanced with Gd-substitution and the SrOy reduced Schottky-like barrier height and resistive switching ratio from the potential drop and screening effect. The relationship between A-site vacancy generation resulting in surface segregation of SrOy and resistive switching behavior was also investigated by energy resolved x-ray photoelectron spectroscopy, O 1s near edge x-ray absorption spectroscopy, and current voltage measurement.

Original languageEnglish
Article number191604
JournalApplied Physics Letters
Volume104
Issue number19
DOIs
Publication statusPublished - 2014 May 12

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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