Effect of metal (Al, Ga, and In)-dopants and/or Ag-nanoparticles on the optical and electrical properties of ZnO thin films

Chae Seon Hong, Hyeong Ho Park, Jooho Moon, Hyung Ho Park

Research output: Contribution to journalArticle

79 Citations (Scopus)

Abstract

ZnO thin films were deposited by a sol-gel process using zinc acetate dihydrate and 2-methoxyethanol as starting precursor and solvent, respectively. Ag-nanoparticles were prepared with uniform size (4.4 nm) by the spontaneous reduction method of Ag 2-ethylhexanoate in Dimethyl sulfoxide. The optical and electrical characteristics of ZnO films with the introduction of 3A metal (Al, Ga, and In)-dopants and/or Ag-nanoparticles were evaluated. The optical and electrical properties of metal-doped ZnO films were improved and light scatter, charge emission and the scattering behavior of Ag-nanoparticles incorporated into the ZnO thin film were measured. The introduction of Ag-nanoparticles into metal-doped ZnO films induced a slight decrease in the optical transmittance but an increase in the electrical sheet resistance.

Original languageEnglish
Pages (from-to)957-960
Number of pages4
JournalThin Solid Films
Volume515
Issue number3
DOIs
Publication statusPublished - 2006 Nov 23

Fingerprint

Electric properties
Optical properties
Metals
electrical properties
Doping (additives)
Nanoparticles
optical properties
Thin films
nanoparticles
thin films
Zinc Acetate
metals
Dimethyl sulfoxide
Metal nanoparticles
Sheet resistance
Opacity
Dimethyl Sulfoxide
Sol-gel process
Zinc
sol-gel processes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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abstract = "ZnO thin films were deposited by a sol-gel process using zinc acetate dihydrate and 2-methoxyethanol as starting precursor and solvent, respectively. Ag-nanoparticles were prepared with uniform size (4.4 nm) by the spontaneous reduction method of Ag 2-ethylhexanoate in Dimethyl sulfoxide. The optical and electrical characteristics of ZnO films with the introduction of 3A metal (Al, Ga, and In)-dopants and/or Ag-nanoparticles were evaluated. The optical and electrical properties of metal-doped ZnO films were improved and light scatter, charge emission and the scattering behavior of Ag-nanoparticles incorporated into the ZnO thin film were measured. The introduction of Ag-nanoparticles into metal-doped ZnO films induced a slight decrease in the optical transmittance but an increase in the electrical sheet resistance.",
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Effect of metal (Al, Ga, and In)-dopants and/or Ag-nanoparticles on the optical and electrical properties of ZnO thin films. / Hong, Chae Seon; Park, Hyeong Ho; Moon, Jooho; Park, Hyung Ho.

In: Thin Solid Films, Vol. 515, No. 3, 23.11.2006, p. 957-960.

Research output: Contribution to journalArticle

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T1 - Effect of metal (Al, Ga, and In)-dopants and/or Ag-nanoparticles on the optical and electrical properties of ZnO thin films

AU - Hong, Chae Seon

AU - Park, Hyeong Ho

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AU - Park, Hyung Ho

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AB - ZnO thin films were deposited by a sol-gel process using zinc acetate dihydrate and 2-methoxyethanol as starting precursor and solvent, respectively. Ag-nanoparticles were prepared with uniform size (4.4 nm) by the spontaneous reduction method of Ag 2-ethylhexanoate in Dimethyl sulfoxide. The optical and electrical characteristics of ZnO films with the introduction of 3A metal (Al, Ga, and In)-dopants and/or Ag-nanoparticles were evaluated. The optical and electrical properties of metal-doped ZnO films were improved and light scatter, charge emission and the scattering behavior of Ag-nanoparticles incorporated into the ZnO thin film were measured. The introduction of Ag-nanoparticles into metal-doped ZnO films induced a slight decrease in the optical transmittance but an increase in the electrical sheet resistance.

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