Effect of modification of S-terminated Ge(1 0 0) surface on ALD HfO                         2                          gate stack

Younghwan Lee; Kibyung Park; Kyung Taek Im; June Young Lee; Seongil Im; Jung Han Lee; Yeonjin Yi; Sangwoo Lim

doi:10.1016/j.apsusc.2009.03.055

Effect of modification of S-terminated Ge(1 0 0) surface on ALD HfO ₂ gate stack

Younghwan Lee, Kibyung Park, Kyung Taek Im, June Young Lee, Seongil Im, Jung Han Lee, Yeonjin Yi, Sangwoo Lim

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

When S-termination on a Ge(1 0 0) surface was desorbed at an elevated temperature and an atomic layer deposition (ALD) HfO ₂ film was deposited, interfacial thickness was less than 1 nm. As a result, the equivalent oxide thickness (EOT) of the stack on the initially S-terminated surface was thinner than that deposited on the O ₃ -oxidized surface, while HfO ₂ film thickness was almost identical on both surfaces. Nevertheless, the HfO ₂ stack on the initially S-terminated surface exhibited improved leakage current characteristics due to an increase in barrier height. Its thinner but robust interface will contribute to the scaling down of gate oxide integrity.

Original language	English
Pages (from-to)	7179-7182
Number of pages	4
Journal	Applied Surface Science
Volume	255
Issue number	16
DOIs	https://doi.org/10.1016/j.apsusc.2009.03.055
Publication status	Published - 2009 May 30

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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Lee, Younghwan ; Park, Kibyung ; Im, Kyung Taek ; Lee, June Young ; Im, Seongil ; Lee, Jung Han ; Yi, Yeonjin ; Lim, Sangwoo. / Effect of modification of S-terminated Ge(1 0 0) surface on ALD HfO ₂ gate stack In: Applied Surface Science. 2009 ; Vol. 255, No. 16. pp. 7179-7182.

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title = " Effect of modification of S-terminated Ge(1 0 0) surface on ALD HfO 2 gate stack ",

abstract = " When S-termination on a Ge(1 0 0) surface was desorbed at an elevated temperature and an atomic layer deposition (ALD) HfO 2 film was deposited, interfacial thickness was less than 1 nm. As a result, the equivalent oxide thickness (EOT) of the stack on the initially S-terminated surface was thinner than that deposited on the O 3 -oxidized surface, while HfO 2 film thickness was almost identical on both surfaces. Nevertheless, the HfO 2 stack on the initially S-terminated surface exhibited improved leakage current characteristics due to an increase in barrier height. Its thinner but robust interface will contribute to the scaling down of gate oxide integrity.",

author = "Younghwan Lee and Kibyung Park and Im, {Kyung Taek} and Lee, {June Young} and Seongil Im and Lee, {Jung Han} and Yeonjin Yi and Sangwoo Lim",

year = "2009",

month = may,

day = "30",

doi = "10.1016/j.apsusc.2009.03.055",

language = "English",

volume = "255",

pages = "7179--7182",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "16",

}

Effect of modification of S-terminated Ge(1 0 0) surface on ALD HfO ₂ gate stack . / Lee, Younghwan; Park, Kibyung; Im, Kyung Taek; Lee, June Young; Im, Seongil; Lee, Jung Han; Yi, Yeonjin ; Lim, Sangwoo.

In: Applied Surface Science, Vol. 255, No. 16, 30.05.2009, p. 7179-7182.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Effect of modification of S-terminated Ge(1 0 0) surface on ALD HfO 2 gate stack

AU - Lee, Younghwan

AU - Park, Kibyung

AU - Im, Kyung Taek

AU - Lee, June Young

AU - Im, Seongil

AU - Lee, Jung Han

AU - Yi, Yeonjin

AU - Lim, Sangwoo

PY - 2009/5/30

Y1 - 2009/5/30

N2 - When S-termination on a Ge(1 0 0) surface was desorbed at an elevated temperature and an atomic layer deposition (ALD) HfO 2 film was deposited, interfacial thickness was less than 1 nm. As a result, the equivalent oxide thickness (EOT) of the stack on the initially S-terminated surface was thinner than that deposited on the O 3 -oxidized surface, while HfO 2 film thickness was almost identical on both surfaces. Nevertheless, the HfO 2 stack on the initially S-terminated surface exhibited improved leakage current characteristics due to an increase in barrier height. Its thinner but robust interface will contribute to the scaling down of gate oxide integrity.

AB - When S-termination on a Ge(1 0 0) surface was desorbed at an elevated temperature and an atomic layer deposition (ALD) HfO 2 film was deposited, interfacial thickness was less than 1 nm. As a result, the equivalent oxide thickness (EOT) of the stack on the initially S-terminated surface was thinner than that deposited on the O 3 -oxidized surface, while HfO 2 film thickness was almost identical on both surfaces. Nevertheless, the HfO 2 stack on the initially S-terminated surface exhibited improved leakage current characteristics due to an increase in barrier height. Its thinner but robust interface will contribute to the scaling down of gate oxide integrity.

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DO - 10.1016/j.apsusc.2009.03.055

M3 - Article

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VL - 255

SP - 7179

EP - 7182

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 16

ER -

Effect of modification of S-terminated Ge(1 0 0) surface on ALD HfO 2 gate stack

Abstract

All Science Journal Classification (ASJC) codes

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Effect of modification of S-terminated Ge(1 0 0) surface on ALD HfO ₂ gate stack