Effect of modification of S-terminated Ge(1 0 0) surface on ALD HfO 2 gate stack

Younghwan Lee, Kibyung Park, Kyung Taek Im, June Young Lee, Seongil Im, Jung Han Lee, Yeonjin Yi, Sangwoo Lim

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1 Citation (Scopus)

Abstract

When S-termination on a Ge(1 0 0) surface was desorbed at an elevated temperature and an atomic layer deposition (ALD) HfO 2 film was deposited, interfacial thickness was less than 1 nm. As a result, the equivalent oxide thickness (EOT) of the stack on the initially S-terminated surface was thinner than that deposited on the O 3 -oxidized surface, while HfO 2 film thickness was almost identical on both surfaces. Nevertheless, the HfO 2 stack on the initially S-terminated surface exhibited improved leakage current characteristics due to an increase in barrier height. Its thinner but robust interface will contribute to the scaling down of gate oxide integrity.

Original languageEnglish
Pages (from-to)7179-7182
Number of pages4
JournalApplied Surface Science
Volume255
Issue number16
DOIs
Publication statusPublished - 2009 May 30

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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