The implementation of ultrahigh-density cross-point array structures has received considerable interest as emerging storage devices, and threshold switching devices are regarded to be promising as to the suppression of leakage current in cross-point array structures. Threshold switching devices need to modulate the threshold voltage (Vth) depending on the various memory elements to achieve proper selector device in cross-point array structures. However, only limited methods are available for controlling Vth. Therefore, the nitrogen (N) doping effects on trap states, density of localized states, and Vth of the amorphous Ga2Te3 (a-Ga2Te3) selector devices are investigated herein. Furthermore, the electrical conduction behavior is fitted using a trap-controlled space charge limited conduction mechanism with two transition voltages, i.e., the space charge limited voltage (VSCL) and trap-filled limited voltage (VTFL). The optical bandgap energy and optical Urbach energy are affected by the N doping in a-Ga2Te3. In addition, N doping in a-Ga2Te3 increases the density of localized states. These effects increase both the transition voltages (VSCL and VTFL). Thus, doping a-Ga2Te3 with N reduces Vth when the trap states are changed. Furthermore, N-doped a-Ga2Te3 selector devices exhibit highly reliable switching up to 109 cycles.
|Journal||Physica Status Solidi (A) Applications and Materials Science|
|Publication status||Published - 2020 Oct 1|
Bibliographical noteFunding Information:
This research was supported by the MOTIE (Ministry of Trade, Industry, and Energy [project number 20010569]) and KSRC (Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device.
© 2020 Wiley-VCH GmbH
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry