Effect of Nitrogen Doping on Threshold Voltage in Amorphous Ga2Te3 for Application of Selector Devices

Dayoon Lee, Taeho Kim, Jaeyeon Kim, Hyunchul Sohn

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The implementation of ultrahigh-density cross-point array structures has received considerable interest as emerging storage devices, and threshold switching devices are regarded to be promising as to the suppression of leakage current in cross-point array structures. Threshold switching devices need to modulate the threshold voltage (Vth) depending on the various memory elements to achieve proper selector device in cross-point array structures. However, only limited methods are available for controlling Vth. Therefore, the nitrogen (N) doping effects on trap states, density of localized states, and Vth of the amorphous Ga2Te3 (a-Ga2Te3) selector devices are investigated herein. Furthermore, the electrical conduction behavior is fitted using a trap-controlled space charge limited conduction mechanism with two transition voltages, i.e., the space charge limited voltage (VSCL) and trap-filled limited voltage (VTFL). The optical bandgap energy and optical Urbach energy are affected by the N doping in a-Ga2Te3. In addition, N doping in a-Ga2Te3 increases the density of localized states. These effects increase both the transition voltages (VSCL and VTFL). Thus, doping a-Ga2Te3 with N reduces Vth when the trap states are changed. Furthermore, N-doped a-Ga2Te3 selector devices exhibit highly reliable switching up to 109 cycles.

Original languageEnglish
Article number2000478
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume217
Issue number20
DOIs
Publication statusPublished - 2020 Oct 1

Bibliographical note

Funding Information:
This research was supported by the MOTIE (Ministry of Trade, Industry, and Energy [project number 20010569]) and KSRC (Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device.

Publisher Copyright:
© 2020 Wiley-VCH GmbH

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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