The HfxAlyOz nanomixed capacitors grown by atomic layer deposition were treated by N2-plasma to improve electrical properties. Especially, leakage current characteristics was studied as a function of rf power and treatment temperature. The dielectric constant of the films was not varied irrespective of an increase of rf power and treatment temperature. The leakage current densities of the films treated by N 2-plasma were effectively influenced by the treatment temperature rather than rf power. The N2-plasma treatment at 300°C and 70 W exhibits the most effective influence on improvement of the leakage current characteristics. The dielectric constant, dielectric loss, and leakage current density at 2.0 V in 6 nm-thick Hf0.27 Al0.24 O 0.49 nanomixed films treated by N2-plasma at 300°C and 70 W were approximately 16, 0.5%, and 2 × 10-6 A/cm 2, respectively.
|Number of pages||6|
|Publication status||Published - 2005|
|Event||Seventeenth International Symposium on Integrated Ferroelectrics, ISIF-17 - Shanghai, China|
Duration: 2005 Apr 17 → 2005 Apr 20
Bibliographical noteFunding Information:
This work was supported by Korea Research Foundation Grant (KRF-2004-042-D00095), the Brain Korea 21 project in 2005, by Grant No. R01-2003-000-10027-0 from the Korea Science & Engineering Foundation, and by the Korea Science and Engineering Foundation through the Research Center for Advanced Magnetic Materials at Chungnam National University.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Control and Systems Engineering
- Ceramics and Composites
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry