The nitrogen incorporation into the Hf O2 films with an EOT (equivalent oxide thickness) of 9 Å was performed by N2 -plasma to improve the electrical properties. The dielectric properties and a leakage current characteristics of the capacitors were investigated as a function of plasma power and plasma treatment temperature. The dielectric constant of the capacitors is not influenced by nitrogen incorporation. The N2 -plasma treatment at 300 °C and 70 W exhibits the most effective influence on improvement of the leakage current characteristics. Leakage current density of the capacitors treated at 300 °C and 70 W exhibits a half order of magnitude lower than that without plasma treatment. Nitrogen incorporated into the Hf O2 films possesses the intrinsic effect that drastically reduce the electron leakage current through Hf O2 dielectrics by deactivating the VO (oxygen vacancy) related gap states.
Bibliographical noteFunding Information:
This work was supported by Korea Research Foundation Grant (KRF-2002-042-D00066), the Brain Korea 21 project in 2003, by Grant No. R01-2003-000-10027-0 from the Korea Science & Engineering Foundation, by the Korea Science and Engineering Foundation through the Research Center for Advanced Magnetic Materials at Chungnam National University, and by the Center for Ultramicrochemical Process Systems sponsored by KOSEF.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)