Effect of nitrogen incorporation on improvement of leakage properties in high-k HfO2 capacitors treated by N2-plasma

Nak Jin Seong, Soon Gil Yoon, Seung Jin Yeom, Hyun Kyung Woo, Deok Sin Kil, Jae Sung Roh, Hyun Chul Sohn

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

The nitrogen incorporation into the Hf O2 films with an EOT (equivalent oxide thickness) of 9 Å was performed by N2 -plasma to improve the electrical properties. The dielectric properties and a leakage current characteristics of the capacitors were investigated as a function of plasma power and plasma treatment temperature. The dielectric constant of the capacitors is not influenced by nitrogen incorporation. The N2 -plasma treatment at 300 °C and 70 W exhibits the most effective influence on improvement of the leakage current characteristics. Leakage current density of the capacitors treated at 300 °C and 70 W exhibits a half order of magnitude lower than that without plasma treatment. Nitrogen incorporated into the Hf O2 films possesses the intrinsic effect that drastically reduce the electron leakage current through Hf O2 dielectrics by deactivating the VO (oxygen vacancy) related gap states.

Original languageEnglish
Article number132903
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number13
DOIs
Publication statusPublished - 2005 Sep 26

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capacitors
leakage
nitrogen
dielectric properties
electrical properties
permittivity
current density
oxides
oxygen
electrons
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Seong, Nak Jin ; Yoon, Soon Gil ; Yeom, Seung Jin ; Woo, Hyun Kyung ; Kil, Deok Sin ; Roh, Jae Sung ; Sohn, Hyun Chul. / Effect of nitrogen incorporation on improvement of leakage properties in high-k HfO2 capacitors treated by N2-plasma. In: Applied Physics Letters. 2005 ; Vol. 87, No. 13. pp. 1-3.
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abstract = "The nitrogen incorporation into the Hf O2 films with an EOT (equivalent oxide thickness) of 9 {\AA} was performed by N2 -plasma to improve the electrical properties. The dielectric properties and a leakage current characteristics of the capacitors were investigated as a function of plasma power and plasma treatment temperature. The dielectric constant of the capacitors is not influenced by nitrogen incorporation. The N2 -plasma treatment at 300 °C and 70 W exhibits the most effective influence on improvement of the leakage current characteristics. Leakage current density of the capacitors treated at 300 °C and 70 W exhibits a half order of magnitude lower than that without plasma treatment. Nitrogen incorporated into the Hf O2 films possesses the intrinsic effect that drastically reduce the electron leakage current through Hf O2 dielectrics by deactivating the VO (oxygen vacancy) related gap states.",
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Effect of nitrogen incorporation on improvement of leakage properties in high-k HfO2 capacitors treated by N2-plasma. / Seong, Nak Jin; Yoon, Soon Gil; Yeom, Seung Jin; Woo, Hyun Kyung; Kil, Deok Sin; Roh, Jae Sung; Sohn, Hyun Chul.

In: Applied Physics Letters, Vol. 87, No. 13, 132903, 26.09.2005, p. 1-3.

Research output: Contribution to journalArticle

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AU - Seong, Nak Jin

AU - Yoon, Soon Gil

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AU - Kil, Deok Sin

AU - Roh, Jae Sung

AU - Sohn, Hyun Chul

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AB - The nitrogen incorporation into the Hf O2 films with an EOT (equivalent oxide thickness) of 9 Å was performed by N2 -plasma to improve the electrical properties. The dielectric properties and a leakage current characteristics of the capacitors were investigated as a function of plasma power and plasma treatment temperature. The dielectric constant of the capacitors is not influenced by nitrogen incorporation. The N2 -plasma treatment at 300 °C and 70 W exhibits the most effective influence on improvement of the leakage current characteristics. Leakage current density of the capacitors treated at 300 °C and 70 W exhibits a half order of magnitude lower than that without plasma treatment. Nitrogen incorporated into the Hf O2 films possesses the intrinsic effect that drastically reduce the electron leakage current through Hf O2 dielectrics by deactivating the VO (oxygen vacancy) related gap states.

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