Effect of non-diamond carbon etching on the field emission property of highly sp2 nanocrystalline diamond films

J. Y. Shim, Hong Koo Baik

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The effect of the non-diamond carbon etching on the electron field emission behavior of highly sp2 bonded nanocrystalline diamond films has been systematically investigated by performing hydrogen treatments. Field emission properties and emission patterns of the films are initially enhanced and then degraded with an increase in the hydrogen treatment time. The most uniform distribution of the emission site is obtained for a 1-min hydrogen-treated film, and the reason for this is explained in terms of the increase of triple junction site due to etching of the sp2 bonded carbon by atomic hydrogen. On the other hand, the degraded emission property of the films treated for more than 10 min is due to the decrease of triple junction, which is indirectly confirmed by Raman and Auger electron spectroscopy.

Original languageEnglish
Pages (from-to)847-851
Number of pages5
JournalDiamond and Related Materials
Volume10
Issue number3-7
DOIs
Publication statusPublished - 2001 Mar 1

Fingerprint

Diamond films
diamond films
Field emission
field emission
Hydrogen
Etching
Carbon
etching
carbon
hydrogen
Auger electron spectroscopy
electron emission
Auger spectroscopy
electron spectroscopy
Electrons

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

@article{bd61dc74e3244b7eb02cfca8d8562def,
title = "Effect of non-diamond carbon etching on the field emission property of highly sp2 nanocrystalline diamond films",
abstract = "The effect of the non-diamond carbon etching on the electron field emission behavior of highly sp2 bonded nanocrystalline diamond films has been systematically investigated by performing hydrogen treatments. Field emission properties and emission patterns of the films are initially enhanced and then degraded with an increase in the hydrogen treatment time. The most uniform distribution of the emission site is obtained for a 1-min hydrogen-treated film, and the reason for this is explained in terms of the increase of triple junction site due to etching of the sp2 bonded carbon by atomic hydrogen. On the other hand, the degraded emission property of the films treated for more than 10 min is due to the decrease of triple junction, which is indirectly confirmed by Raman and Auger electron spectroscopy.",
author = "Shim, {J. Y.} and Baik, {Hong Koo}",
year = "2001",
month = "3",
day = "1",
doi = "10.1016/S0925-9635(01)00378-8",
language = "English",
volume = "10",
pages = "847--851",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier BV",
number = "3-7",

}

Effect of non-diamond carbon etching on the field emission property of highly sp2 nanocrystalline diamond films. / Shim, J. Y.; Baik, Hong Koo.

In: Diamond and Related Materials, Vol. 10, No. 3-7, 01.03.2001, p. 847-851.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of non-diamond carbon etching on the field emission property of highly sp2 nanocrystalline diamond films

AU - Shim, J. Y.

AU - Baik, Hong Koo

PY - 2001/3/1

Y1 - 2001/3/1

N2 - The effect of the non-diamond carbon etching on the electron field emission behavior of highly sp2 bonded nanocrystalline diamond films has been systematically investigated by performing hydrogen treatments. Field emission properties and emission patterns of the films are initially enhanced and then degraded with an increase in the hydrogen treatment time. The most uniform distribution of the emission site is obtained for a 1-min hydrogen-treated film, and the reason for this is explained in terms of the increase of triple junction site due to etching of the sp2 bonded carbon by atomic hydrogen. On the other hand, the degraded emission property of the films treated for more than 10 min is due to the decrease of triple junction, which is indirectly confirmed by Raman and Auger electron spectroscopy.

AB - The effect of the non-diamond carbon etching on the electron field emission behavior of highly sp2 bonded nanocrystalline diamond films has been systematically investigated by performing hydrogen treatments. Field emission properties and emission patterns of the films are initially enhanced and then degraded with an increase in the hydrogen treatment time. The most uniform distribution of the emission site is obtained for a 1-min hydrogen-treated film, and the reason for this is explained in terms of the increase of triple junction site due to etching of the sp2 bonded carbon by atomic hydrogen. On the other hand, the degraded emission property of the films treated for more than 10 min is due to the decrease of triple junction, which is indirectly confirmed by Raman and Auger electron spectroscopy.

UR - http://www.scopus.com/inward/record.url?scp=0035269354&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035269354&partnerID=8YFLogxK

U2 - 10.1016/S0925-9635(01)00378-8

DO - 10.1016/S0925-9635(01)00378-8

M3 - Article

VL - 10

SP - 847

EP - 851

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

IS - 3-7

ER -