Effect of number of laser pulses on p+/n silicon ultra-shallow junction formation during non-melt ultra-violet laser thermal annealing

Sang Min Jung, Chul Jin Park, Hongsik Jeong, Moo Whan Shin

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We investigate the effect of the number of laser pulses on the formation of p+/n silicon ultra-shallow junctions during non-melt ultra-violet laser (wavelength, 355 nm) annealing. Through surface peak temperature calculating by COMSOL Multiphysics, the non-melt laser thermal annealing is performed under the energy density of 130 mJ/cm2. We demonstrate that increasing the number of laser pulses without additional pre-annealing is an effective annealing method for achieving good electrical properties and shallow junction depth by analyzing sheet resistance and junction depth profiles. The optimal number of laser pulses is eight for achieving a high degree of activation of dopant without further increase of junction depth. We have also explained the improved electrical characteristics of the samples on the basis of fully recovered crystallinity as revealed by Raman spectroscopy. Thus, it is suggested that controlling the number of laser pulses with moderate energy density is a promising laser annealing method without additional pre-annealing.

Original languageEnglish
Pages (from-to)34-39
Number of pages6
JournalMaterials Science in Semiconductor Processing
Volume60
DOIs
Publication statusPublished - 2017 Mar 15

Fingerprint

Ultraviolet lasers
Silicon
ultraviolet lasers
Laser pulses
Annealing
annealing
silicon
pulses
lasers
flux density
laser annealing
Lasers
Sheet resistance
crystallinity
Raman spectroscopy
electrical properties
Hot Temperature
activation
Electric properties
Chemical activation

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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abstract = "We investigate the effect of the number of laser pulses on the formation of p+/n silicon ultra-shallow junctions during non-melt ultra-violet laser (wavelength, 355 nm) annealing. Through surface peak temperature calculating by COMSOL Multiphysics, the non-melt laser thermal annealing is performed under the energy density of 130 mJ/cm2. We demonstrate that increasing the number of laser pulses without additional pre-annealing is an effective annealing method for achieving good electrical properties and shallow junction depth by analyzing sheet resistance and junction depth profiles. The optimal number of laser pulses is eight for achieving a high degree of activation of dopant without further increase of junction depth. We have also explained the improved electrical characteristics of the samples on the basis of fully recovered crystallinity as revealed by Raman spectroscopy. Thus, it is suggested that controlling the number of laser pulses with moderate energy density is a promising laser annealing method without additional pre-annealing.",
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Effect of number of laser pulses on p+/n silicon ultra-shallow junction formation during non-melt ultra-violet laser thermal annealing. / Jung, Sang Min; Park, Chul Jin; Jeong, Hongsik; Shin, Moo Whan.

In: Materials Science in Semiconductor Processing, Vol. 60, 15.03.2017, p. 34-39.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of number of laser pulses on p+/n silicon ultra-shallow junction formation during non-melt ultra-violet laser thermal annealing

AU - Jung, Sang Min

AU - Park, Chul Jin

AU - Jeong, Hongsik

AU - Shin, Moo Whan

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AB - We investigate the effect of the number of laser pulses on the formation of p+/n silicon ultra-shallow junctions during non-melt ultra-violet laser (wavelength, 355 nm) annealing. Through surface peak temperature calculating by COMSOL Multiphysics, the non-melt laser thermal annealing is performed under the energy density of 130 mJ/cm2. We demonstrate that increasing the number of laser pulses without additional pre-annealing is an effective annealing method for achieving good electrical properties and shallow junction depth by analyzing sheet resistance and junction depth profiles. The optimal number of laser pulses is eight for achieving a high degree of activation of dopant without further increase of junction depth. We have also explained the improved electrical characteristics of the samples on the basis of fully recovered crystallinity as revealed by Raman spectroscopy. Thus, it is suggested that controlling the number of laser pulses with moderate energy density is a promising laser annealing method without additional pre-annealing.

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