Effect of over-oxidized surface layer on metal insulator transition characteristics of VO2 films grown by thermal oxidation method

Howon Kim, Bongjin Simon Mun, Changwoo Park, Honglyoul Ju

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have investigated the effect of over oxidized surface layer on the characteristics of metal-insulator transition (MIT) of vanadium dioxide (VO2) films grown by thermal oxidation method. During the oxidation, the over-oxidized V6O13 layer was formed, which increased contact resistance and thus reduced the resistivity ratio before and after MIT. The contact resistivity of the VO2 film with over-oxidized surface layer was in the range 4.2 × 10−2 ∼ 9.4 × 10−4 Ωcm2. Interestingly, the over-oxidized surface layer was removed by simply cooling the film under reduced oxygen pressure. Upon the removal of the over-oxidized layer, the resistivity ratio across MIT increased up to 1.2 × 104. The ratio of contact resistance to sample resistance was small (large) at low (high) temperature.

Original languageEnglish
Pages (from-to)197-200
Number of pages4
JournalCurrent Applied Physics
Volume17
Issue number2
DOIs
Publication statusPublished - 2017 Feb 1

Fingerprint

Metal insulator transition
surface layers
insulators
Contact resistance
contact resistance
Oxidation
oxidation
electrical resistivity
metals
dioxides
Vanadium
vanadium
electric contacts
Oxygen
Cooling
cooling
oxygen
Hot Temperature
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "We have investigated the effect of over oxidized surface layer on the characteristics of metal-insulator transition (MIT) of vanadium dioxide (VO2) films grown by thermal oxidation method. During the oxidation, the over-oxidized V6O13 layer was formed, which increased contact resistance and thus reduced the resistivity ratio before and after MIT. The contact resistivity of the VO2 film with over-oxidized surface layer was in the range 4.2 × 10−2 ∼ 9.4 × 10−4 Ωcm2. Interestingly, the over-oxidized surface layer was removed by simply cooling the film under reduced oxygen pressure. Upon the removal of the over-oxidized layer, the resistivity ratio across MIT increased up to 1.2 × 104. The ratio of contact resistance to sample resistance was small (large) at low (high) temperature.",
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Effect of over-oxidized surface layer on metal insulator transition characteristics of VO2 films grown by thermal oxidation method. / Kim, Howon; Mun, Bongjin Simon; Park, Changwoo; Ju, Honglyoul.

In: Current Applied Physics, Vol. 17, No. 2, 01.02.2017, p. 197-200.

Research output: Contribution to journalArticle

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