Effect of over-oxidized surface layer on metal insulator transition characteristics of VO2 films grown by thermal oxidation method

Howon Kim, Bongjin Simon Mun, Changwoo Park, Honglyoul Ju

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1 Citation (Scopus)

Abstract

We have investigated the effect of over oxidized surface layer on the characteristics of metal-insulator transition (MIT) of vanadium dioxide (VO2) films grown by thermal oxidation method. During the oxidation, the over-oxidized V6O13 layer was formed, which increased contact resistance and thus reduced the resistivity ratio before and after MIT. The contact resistivity of the VO2 film with over-oxidized surface layer was in the range 4.2 × 10−2 ∼ 9.4 × 10−4 Ωcm2. Interestingly, the over-oxidized surface layer was removed by simply cooling the film under reduced oxygen pressure. Upon the removal of the over-oxidized layer, the resistivity ratio across MIT increased up to 1.2 × 104. The ratio of contact resistance to sample resistance was small (large) at low (high) temperature.

Original languageEnglish
Pages (from-to)197-200
Number of pages4
JournalCurrent Applied Physics
Volume17
Issue number2
DOIs
Publication statusPublished - 2017 Feb 1

Bibliographical note

Funding Information:
H. L. Ju and B. S. Mun would like to thank the Basic Science Research Program for support through grants from the National Research Foundation of Korea (NRF) funded by the Korean Government (MOE) ( NRF-2015R1D1A1A01059297 & NRF-2015R1A2A2A01004084 ). B. S. Mun would like to acknowledge support from “GRI (GIST Research Institute)” Project through a grant provided by GIST in 2016.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

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