Effect of oxygen diffusion into TiN on resistance switching characteristics of ZrO2 films with annealing temperatures

Jonggi Kim, Sunghoon Lee, Heedo Na, Kyumin Lee, Hyunchu Sohn

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this study, the effects of annealing temperature on both physical and resistive switching properties of ZrO2 films were investigated. XRD showed the increase of the monoclinic phase in the as-grown tetragonal ZrO 2 with annealing above 450C. The ZrO2 films exhibited the unipolar and the bipolar switching behaviors in Pt/ZrO2/TiN MIM structure. The HRS resistance in unipolar switching behavior was reduced with increasing annealing temperature. On the contrary, The HRS resistance in bipolar switching behavior was increased. XPS showed the increase of metallic Zr in annealed ZrO2 films that could cause the reduction of HRS resistance in unipolar resistance switching of ZrO2. SIMS spectra confirmed the enlargement of interfacial TiOxNy layer in TiN bottom electrode with increasing the annealing temperature. The enlargement of interfacial TiOxNy layer was expected to cause an increase of HRS resistance because the larger amount of mobile oxygen ions in inter-facial TiOxNy layer was possible to migrate to ZrO2-x films.

Original languageEnglish
Title of host publication2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011
DOIs
Publication statusPublished - 2011 Aug 30
Event2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011 - Dresden, Germany
Duration: 2011 May 82011 May 12

Publication series

Name2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011

Other

Other2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011
CountryGermany
CityDresden
Period11/5/811/5/12

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All Science Journal Classification (ASJC) codes

  • Materials Chemistry
  • Metals and Alloys

Cite this

Kim, J., Lee, S., Na, H., Lee, K., & Sohn, H. (2011). Effect of oxygen diffusion into TiN on resistance switching characteristics of ZrO2 films with annealing temperatures. In 2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011 [5940347] (2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011). https://doi.org/10.1109/IITC.2011.5940347