Effect of oxygen ion energy and annealing in formation of tin oxide thin films

Seok Kyun Song, Won Kook Choi, Jun Sik Cho, Hyung Jin Jung, Dongsoo Choi, Jeong Yong Lee, Hong Koo Baik, Seok Keun Koh

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11 Citations (Scopus)


Tin oxide (SnOx) thin films were deposited by ion-assisted deposition (IAD) at various ion beam voltages (VI) onto amorphous SiO2/Si substrate at room temperature. Tin oxide thin films with nonstoichiometric/stoichiometric composition were fabricated. The as-deposited SnOix films were mostly amorphous, but they exhibited various degrees of crystallinity and fine grain size after annealing at 500°C for 1 h in air. The annealed film deposited using an ion beam energy (Ei) of 300eV showed a preferred orientation along the SnO2 (110) plane. The preferred orientation changed to SnO2 (002) for film 1000 (the annealed film deposited with EI = 1000eV) through an amorphous intermediate structure of film 500 (the annealed film deposited with EI = 500eV). X-ray photoelectron spectroscopy study showed that the main Sn3d peaks in all samples were similar to the binding energy of Sn4+ and the atomic ratios for all the films were higher than 1.51. For the film grown under an average energy of 123 eV/atom, the refractive index was 2.0 and the estimated porosity was 5.2% smaller than that of the other films.

Original languageEnglish
Pages (from-to)2281-2287
Number of pages7
JournalJapanese Journal of Applied Physics
Issue number4 A
Publication statusPublished - 1997 Apr

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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