Tin oxide (SnOx) thin films were deposited by ion-assisted deposition (IAD) at various ion beam voltages (VI) onto amorphous SiO2/Si substrate at room temperature. Tin oxide thin films with nonstoichiometric/stoichiometric composition were fabricated. The as-deposited SnOix films were mostly amorphous, but they exhibited various degrees of crystallinity and fine grain size after annealing at 500°C for 1 h in air. The annealed film deposited using an ion beam energy (Ei) of 300eV showed a preferred orientation along the SnO2 (110) plane. The preferred orientation changed to SnO2 (002) for film 1000 (the annealed film deposited with EI = 1000eV) through an amorphous intermediate structure of film 500 (the annealed film deposited with EI = 500eV). X-ray photoelectron spectroscopy study showed that the main Sn3d peaks in all samples were similar to the binding energy of Sn4+ and the atomic ratios for all the films were higher than 1.51. For the film grown under an average energy of 123 eV/atom, the refractive index was 2.0 and the estimated porosity was 5.2% smaller than that of the other films.
|Number of pages||7|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 A|
|Publication status||Published - 1997 Apr|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)