The present work was made to investigate the effect of oxygen pressure of SiOx layer on the electrical properties of Ga-doped ZnO (GZO) films deposited on poly-ethylene telephthalate (PET) substrate by utilizing the pulsed-laser deposition at ambient temperature. For this purpose, the SiOx buffer layers were deposited at various oxygen pressures ranging from 13.3 to 46.7 Pa. With increasing oxygen pressure during the deposition of SiOx layer as a buffer, the electrical resistivity of GZO/SiOx/PET films gradually decreased from 7.6 × 10- 3 to 6.8 × 10- 4 Ω·cm, due to the enhanced mobility of GZO films. It was mainly due to the grain size of GZO films related to the roughened surface of the SiOx buffer layers. In addition, the average optical transmittance of GZO/SiOx/PET films in a visible regime was estimated to be ~ 90% comparable to that of GZO deposited onto a glass substrate.
Bibliographical noteFunding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF, R0A-2007-000-10044-0 (2007)) and by the Korea Research Foundation (KRF, KRF-2007-357-D00136 (2007)) of the Korean Government (MOST).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry