Effect of oxygen pressure of SiOx buffer layer on the electrical properties of GZO film deposited on PET substrate

Byung Du Ahn, Young Gun Ko, Sang Hoon Oh, Jean Ho Song, Hyun Jae Kim

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

The present work was made to investigate the effect of oxygen pressure of SiOx layer on the electrical properties of Ga-doped ZnO (GZO) films deposited on poly-ethylene telephthalate (PET) substrate by utilizing the pulsed-laser deposition at ambient temperature. For this purpose, the SiOx buffer layers were deposited at various oxygen pressures ranging from 13.3 to 46.7 Pa. With increasing oxygen pressure during the deposition of SiOx layer as a buffer, the electrical resistivity of GZO/SiOx/PET films gradually decreased from 7.6 × 10- 3 to 6.8 × 10- 4 Ω·cm, due to the enhanced mobility of GZO films. It was mainly due to the grain size of GZO films related to the roughened surface of the SiOx buffer layers. In addition, the average optical transmittance of GZO/SiOx/PET films in a visible regime was estimated to be ~ 90% comparable to that of GZO deposited onto a glass substrate.

Original languageEnglish
Pages (from-to)6414-6417
Number of pages4
JournalThin Solid Films
Volume517
Issue number23
DOIs
Publication statusPublished - 2009 Oct 1

Fingerprint

Buffer layers
Ethylene
Electric properties
ethylene
buffers
electrical properties
Oxygen
oxygen
Substrates
Opacity
Pulsed laser deposition
ambient temperature
pulsed laser deposition
transmittance
Buffers
grain size
Glass
electrical resistivity
glass
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Ahn, Byung Du ; Ko, Young Gun ; Oh, Sang Hoon ; Song, Jean Ho ; Kim, Hyun Jae. / Effect of oxygen pressure of SiOx buffer layer on the electrical properties of GZO film deposited on PET substrate. In: Thin Solid Films. 2009 ; Vol. 517, No. 23. pp. 6414-6417.
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Effect of oxygen pressure of SiOx buffer layer on the electrical properties of GZO film deposited on PET substrate. / Ahn, Byung Du; Ko, Young Gun; Oh, Sang Hoon; Song, Jean Ho; Kim, Hyun Jae.

In: Thin Solid Films, Vol. 517, No. 23, 01.10.2009, p. 6414-6417.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of oxygen pressure of SiOx buffer layer on the electrical properties of GZO film deposited on PET substrate

AU - Ahn, Byung Du

AU - Ko, Young Gun

AU - Oh, Sang Hoon

AU - Song, Jean Ho

AU - Kim, Hyun Jae

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AB - The present work was made to investigate the effect of oxygen pressure of SiOx layer on the electrical properties of Ga-doped ZnO (GZO) films deposited on poly-ethylene telephthalate (PET) substrate by utilizing the pulsed-laser deposition at ambient temperature. For this purpose, the SiOx buffer layers were deposited at various oxygen pressures ranging from 13.3 to 46.7 Pa. With increasing oxygen pressure during the deposition of SiOx layer as a buffer, the electrical resistivity of GZO/SiOx/PET films gradually decreased from 7.6 × 10- 3 to 6.8 × 10- 4 Ω·cm, due to the enhanced mobility of GZO films. It was mainly due to the grain size of GZO films related to the roughened surface of the SiOx buffer layers. In addition, the average optical transmittance of GZO/SiOx/PET films in a visible regime was estimated to be ~ 90% comparable to that of GZO deposited onto a glass substrate.

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