Abstract
Herein, the effect of P concentration in highly P-doped epitaxial Si films on the formation of Ti silicide therein are investigated. Ti films sputter-deposited on P-doped Si substrates are annealed at different temperatures, and the thus obtained samples are characterized by X-ray diffraction (XRD) and transmission electron microscopy. The former technique revealed that the formation of C54 is suppressed by high P concentrations, while the resistivity of Ti silicide are shown to be independent of P concentration when the C54 phase is fully formed under the condition of sufficient thermal budget. Most importantly, this work confirms the occurrence of a silicidation delay in in situ P-doped epitaxial Si films and demonstrates that this delay increases the temperature of the C49 to C54 phase transition of Ti silicide.
| Original language | English |
|---|---|
| Article number | 1800620 |
| Journal | Physica Status Solidi (A) Applications and Materials Science |
| Volume | 216 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2019 May 22 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry
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Effect of P Concentration on Ti Silicide Formation in In-Situ P Doped Epitaxial Si Films. / Park, Seran; Shin, Hyunsu; Ko, Eunjung; Ko, Dae Hong.
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 216, No. 10, 1800620, 22.05.2019.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effect of P Concentration on Ti Silicide Formation in In-Situ P Doped Epitaxial Si Films
AU - Park, Seran
AU - Shin, Hyunsu
AU - Ko, Eunjung
AU - Ko, Dae Hong
PY - 2019/5/22
Y1 - 2019/5/22
N2 - Herein, the effect of P concentration in highly P-doped epitaxial Si films on the formation of Ti silicide therein are investigated. Ti films sputter-deposited on P-doped Si substrates are annealed at different temperatures, and the thus obtained samples are characterized by X-ray diffraction (XRD) and transmission electron microscopy. The former technique revealed that the formation of C54 is suppressed by high P concentrations, while the resistivity of Ti silicide are shown to be independent of P concentration when the C54 phase is fully formed under the condition of sufficient thermal budget. Most importantly, this work confirms the occurrence of a silicidation delay in in situ P-doped epitaxial Si films and demonstrates that this delay increases the temperature of the C49 to C54 phase transition of Ti silicide.
AB - Herein, the effect of P concentration in highly P-doped epitaxial Si films on the formation of Ti silicide therein are investigated. Ti films sputter-deposited on P-doped Si substrates are annealed at different temperatures, and the thus obtained samples are characterized by X-ray diffraction (XRD) and transmission electron microscopy. The former technique revealed that the formation of C54 is suppressed by high P concentrations, while the resistivity of Ti silicide are shown to be independent of P concentration when the C54 phase is fully formed under the condition of sufficient thermal budget. Most importantly, this work confirms the occurrence of a silicidation delay in in situ P-doped epitaxial Si films and demonstrates that this delay increases the temperature of the C49 to C54 phase transition of Ti silicide.
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U2 - 10.1002/pssa.201800620
DO - 10.1002/pssa.201800620
M3 - Article
VL - 216
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
SN - 1862-6300
IS - 10
M1 - 1800620
ER -