Abstract
Herein, the effect of P concentration in highly P-doped epitaxial Si films on the formation of Ti silicide therein are investigated. Ti films sputter-deposited on P-doped Si substrates are annealed at different temperatures, and the thus obtained samples are characterized by X-ray diffraction (XRD) and transmission electron microscopy. The former technique revealed that the formation of C54 is suppressed by high P concentrations, while the resistivity of Ti silicide are shown to be independent of P concentration when the C54 phase is fully formed under the condition of sufficient thermal budget. Most importantly, this work confirms the occurrence of a silicidation delay in in situ P-doped epitaxial Si films and demonstrates that this delay increases the temperature of the C49 to C54 phase transition of Ti silicide.
| Original language | English |
|---|---|
| Article number | 1800620 |
| Journal | Physica Status Solidi (A) Applications and Materials Science |
| Volume | 216 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2019 May 22 |
Bibliographical note
Funding Information:S.P. and H.S. contributed equally to this work. This work was supported by the Joint Program for Samsung Electronics-Yonsei University.
Publisher Copyright:
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry