Effect of P Concentration on Ti Silicide Formation in In-Situ P Doped Epitaxial Si Films

Seran Park; Hyunsu Shin; Eunjung Ko; Dae Hong Ko

doi:10.1002/pssa.201800620

Effect of P Concentration on Ti Silicide Formation in In-Situ P Doped Epitaxial Si Films

Seran Park, Hyunsu Shin, Eunjung Ko, Dae Hong Ko

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Herein, the effect of P concentration in highly P-doped epitaxial Si films on the formation of Ti silicide therein are investigated. Ti films sputter-deposited on P-doped Si substrates are annealed at different temperatures, and the thus obtained samples are characterized by X-ray diffraction (XRD) and transmission electron microscopy. The former technique revealed that the formation of C54 is suppressed by high P concentrations, while the resistivity of Ti silicide are shown to be independent of P concentration when the C54 phase is fully formed under the condition of sufficient thermal budget. Most importantly, this work confirms the occurrence of a silicidation delay in in situ P-doped epitaxial Si films and demonstrates that this delay increases the temperature of the C49 to C54 phase transition of Ti silicide.

Original language	English
Article number	1800620
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	216
Issue number	10
DOIs	https://doi.org/10.1002/pssa.201800620
Publication status	Published - 2019 May 22

Bibliographical note

Funding Information:
S.P. and H.S. contributed equally to this work. This work was supported by the Joint Program for Samsung Electronics-Yonsei University.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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title = "Effect of P Concentration on Ti Silicide Formation in In-Situ P Doped Epitaxial Si Films",

abstract = "Herein, the effect of P concentration in highly P-doped epitaxial Si films on the formation of Ti silicide therein are investigated. Ti films sputter-deposited on P-doped Si substrates are annealed at different temperatures, and the thus obtained samples are characterized by X-ray diffraction (XRD) and transmission electron microscopy. The former technique revealed that the formation of C54 is suppressed by high P concentrations, while the resistivity of Ti silicide are shown to be independent of P concentration when the C54 phase is fully formed under the condition of sufficient thermal budget. Most importantly, this work confirms the occurrence of a silicidation delay in in situ P-doped epitaxial Si films and demonstrates that this delay increases the temperature of the C49 to C54 phase transition of Ti silicide.",

author = "Seran Park and Hyunsu Shin and Eunjung Ko and Ko, {Dae Hong}",

note = "Funding Information: S.P. and H.S. contributed equally to this work. This work was supported by the Joint Program for Samsung Electronics-Yonsei University.",

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AU - Park, Seran

AU - Shin, Hyunsu

AU - Ko, Eunjung

AU - Ko, Dae Hong

N1 - Funding Information: S.P. and H.S. contributed equally to this work. This work was supported by the Joint Program for Samsung Electronics-Yonsei University.

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