Effect of P Concentration on Ti Silicide Formation in In-Situ P Doped Epitaxial Si Films

Seran Park, Hyunsu Shin, Eunjung Ko, Dae Hong Ko

Research output: Contribution to journalArticle

Abstract

Herein, the effect of P concentration in highly P-doped epitaxial Si films on the formation of Ti silicide therein are investigated. Ti films sputter-deposited on P-doped Si substrates are annealed at different temperatures, and the thus obtained samples are characterized by X-ray diffraction (XRD) and transmission electron microscopy. The former technique revealed that the formation of C54 is suppressed by high P concentrations, while the resistivity of Ti silicide are shown to be independent of P concentration when the C54 phase is fully formed under the condition of sufficient thermal budget. Most importantly, this work confirms the occurrence of a silicidation delay in in situ P-doped epitaxial Si films and demonstrates that this delay increases the temperature of the C49 to C54 phase transition of Ti silicide.

Original languageEnglish
Article number1800620
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume216
Issue number10
DOIs
Publication statusPublished - 2019 May 22

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budgets
Phase transitions
occurrences
Transmission electron microscopy
X ray diffraction
Temperature
transmission electron microscopy
electrical resistivity
temperature
Substrates
diffraction
x rays
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

@article{3c420f6b074443dea27c7d613d35dc99,
title = "Effect of P Concentration on Ti Silicide Formation in In-Situ P Doped Epitaxial Si Films",
abstract = "Herein, the effect of P concentration in highly P-doped epitaxial Si films on the formation of Ti silicide therein are investigated. Ti films sputter-deposited on P-doped Si substrates are annealed at different temperatures, and the thus obtained samples are characterized by X-ray diffraction (XRD) and transmission electron microscopy. The former technique revealed that the formation of C54 is suppressed by high P concentrations, while the resistivity of Ti silicide are shown to be independent of P concentration when the C54 phase is fully formed under the condition of sufficient thermal budget. Most importantly, this work confirms the occurrence of a silicidation delay in in situ P-doped epitaxial Si films and demonstrates that this delay increases the temperature of the C49 to C54 phase transition of Ti silicide.",
author = "Seran Park and Hyunsu Shin and Eunjung Ko and Ko, {Dae Hong}",
year = "2019",
month = "5",
day = "22",
doi = "10.1002/pssa.201800620",
language = "English",
volume = "216",
journal = "Physica Status Solidi (A) Applications and Materials Science",
issn = "1862-6300",
publisher = "Wiley-VCH Verlag",
number = "10",

}

Effect of P Concentration on Ti Silicide Formation in In-Situ P Doped Epitaxial Si Films. / Park, Seran; Shin, Hyunsu; Ko, Eunjung; Ko, Dae Hong.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 216, No. 10, 1800620, 22.05.2019.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of P Concentration on Ti Silicide Formation in In-Situ P Doped Epitaxial Si Films

AU - Park, Seran

AU - Shin, Hyunsu

AU - Ko, Eunjung

AU - Ko, Dae Hong

PY - 2019/5/22

Y1 - 2019/5/22

N2 - Herein, the effect of P concentration in highly P-doped epitaxial Si films on the formation of Ti silicide therein are investigated. Ti films sputter-deposited on P-doped Si substrates are annealed at different temperatures, and the thus obtained samples are characterized by X-ray diffraction (XRD) and transmission electron microscopy. The former technique revealed that the formation of C54 is suppressed by high P concentrations, while the resistivity of Ti silicide are shown to be independent of P concentration when the C54 phase is fully formed under the condition of sufficient thermal budget. Most importantly, this work confirms the occurrence of a silicidation delay in in situ P-doped epitaxial Si films and demonstrates that this delay increases the temperature of the C49 to C54 phase transition of Ti silicide.

AB - Herein, the effect of P concentration in highly P-doped epitaxial Si films on the formation of Ti silicide therein are investigated. Ti films sputter-deposited on P-doped Si substrates are annealed at different temperatures, and the thus obtained samples are characterized by X-ray diffraction (XRD) and transmission electron microscopy. The former technique revealed that the formation of C54 is suppressed by high P concentrations, while the resistivity of Ti silicide are shown to be independent of P concentration when the C54 phase is fully formed under the condition of sufficient thermal budget. Most importantly, this work confirms the occurrence of a silicidation delay in in situ P-doped epitaxial Si films and demonstrates that this delay increases the temperature of the C49 to C54 phase transition of Ti silicide.

UR - http://www.scopus.com/inward/record.url?scp=85060633814&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85060633814&partnerID=8YFLogxK

U2 - 10.1002/pssa.201800620

DO - 10.1002/pssa.201800620

M3 - Article

VL - 216

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

SN - 1862-6300

IS - 10

M1 - 1800620

ER -