Effect of penetration depth on electrical properties in Pd/Ge/Ti/Au ohmic contact to high-low-doped n-GaAs

Joon Seop Kwak; Jong Lam Lee; Hong Koo Baik; Dong Won Shin; Chan Gyung Park; Haecheon Kim

doi:10.1143/jjap.35.3841

Effect of penetration depth on electrical properties in Pd/Ge/Ti/Au ohmic contact to high-low-doped n-GaAs

Joon Seop Kwak, Jong Lam Lee, Hong Koo Baik, Dong Won Shin, Chan Gyung Park, Haecheon Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Penetration depth of Pd/Ge/Ti/Au ohmicPenetrationcontact to high-low-doped n-GaAs has been investigated using cross-sectional transmission electron microscopy, and the results are used to interpret the electrical properties. The ohmic metals do not penetrate into the GaAs substrate at 300°C, but penetrate deeper than 1000 Å into GaAs at 380°C. This is due to fast indiffusion of Au toward the GaAs substrate through the grain boundary of the PdGe compound, followed by formation of AuGa through reaction with GaAs. The deep penetration into GaAs at 380°C results in the lowest contact resistance of 0.43 Ωmmdue to direct contact of ohmic metals with the buried high-doped GaAs layer.

Original language	English
Pages (from-to)	3841-3844
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	35
Issue number	7
DOIs	https://doi.org/10.1143/jjap.35.3841
Publication status	Published - 1996 Jul

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Effect of penetration depth on electrical properties in Pd/Ge/Ti/Au ohmic contact to high-low-doped n-GaAs",

abstract = "Penetration depth of Pd/Ge/Ti/Au ohmicPenetrationcontact to high-low-doped n-GaAs has been investigated using cross-sectional transmission electron microscopy, and the results are used to interpret the electrical properties. The ohmic metals do not penetrate into the GaAs substrate at 300°C, but penetrate deeper than 1000 {\AA} into GaAs at 380°C. This is due to fast indiffusion of Au toward the GaAs substrate through the grain boundary of the PdGe compound, followed by formation of AuGa through reaction with GaAs. The deep penetration into GaAs at 380°C results in the lowest contact resistance of 0.43 Ωmmdue to direct contact of ohmic metals with the buried high-doped GaAs layer.",

author = "Kwak, {Joon Seop} and Lee, {Jong Lam} and Baik, {Hong Koo} and Shin, {Dong Won} and Park, {Chan Gyung} and Haecheon Kim",

year = "1996",

month = jul,

doi = "10.1143/jjap.35.3841",

language = "English",

volume = "35",

pages = "3841--3844",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "7",

}

Effect of penetration depth on electrical properties in Pd/Ge/Ti/Au ohmic contact to high-low-doped n-GaAs. / Kwak, Joon Seop; Lee, Jong Lam; Baik, Hong Koo; Shin, Dong Won; Park, Chan Gyung; Kim, Haecheon.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 35, No. 7, 07.1996, p. 3841-3844.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Effect of penetration depth on electrical properties in Pd/Ge/Ti/Au ohmic contact to high-low-doped n-GaAs

AU - Kwak, Joon Seop

AU - Lee, Jong Lam

AU - Baik, Hong Koo

AU - Shin, Dong Won

AU - Park, Chan Gyung

AU - Kim, Haecheon

PY - 1996/7

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N2 - Penetration depth of Pd/Ge/Ti/Au ohmicPenetrationcontact to high-low-doped n-GaAs has been investigated using cross-sectional transmission electron microscopy, and the results are used to interpret the electrical properties. The ohmic metals do not penetrate into the GaAs substrate at 300°C, but penetrate deeper than 1000 Å into GaAs at 380°C. This is due to fast indiffusion of Au toward the GaAs substrate through the grain boundary of the PdGe compound, followed by formation of AuGa through reaction with GaAs. The deep penetration into GaAs at 380°C results in the lowest contact resistance of 0.43 Ωmmdue to direct contact of ohmic metals with the buried high-doped GaAs layer.

AB - Penetration depth of Pd/Ge/Ti/Au ohmicPenetrationcontact to high-low-doped n-GaAs has been investigated using cross-sectional transmission electron microscopy, and the results are used to interpret the electrical properties. The ohmic metals do not penetrate into the GaAs substrate at 300°C, but penetrate deeper than 1000 Å into GaAs at 380°C. This is due to fast indiffusion of Au toward the GaAs substrate through the grain boundary of the PdGe compound, followed by formation of AuGa through reaction with GaAs. The deep penetration into GaAs at 380°C results in the lowest contact resistance of 0.43 Ωmmdue to direct contact of ohmic metals with the buried high-doped GaAs layer.

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

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Effect of penetration depth on electrical properties in Pd/Ge/Ti/Au ohmic contact to high-low-doped n-GaAs

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