Effect of penetration depth on electrical properties in Pd/Ge/Ti/Au ohmic contact to high-low-doped n-GaAs

Joon Seop Kwak, Jong Lam Lee, Hong Koo Baik, Dong Won Shin, Chan Gyung Park, Haecheon Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Penetration depth of Pd/Ge/Ti/Au ohmicPenetrationcontact to high-low-doped n-GaAs has been investigated using cross-sectional transmission electron microscopy, and the results are used to interpret the electrical properties. The ohmic metals do not penetrate into the GaAs substrate at 300°C, but penetrate deeper than 1000 Å into GaAs at 380°C. This is due to fast indiffusion of Au toward the GaAs substrate through the grain boundary of the PdGe compound, followed by formation of AuGa through reaction with GaAs. The deep penetration into GaAs at 380°C results in the lowest contact resistance of 0.43 Ωmmdue to direct contact of ohmic metals with the buried high-doped GaAs layer.

Original languageEnglish
Pages (from-to)3841-3844
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number7
Publication statusPublished - 1996 Jul 1

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Ohmic contacts
electric contacts
Electric properties
penetration
electrical properties
Substrates
Contact resistance
contact resistance
Metals
metals
Grain boundaries
grain boundaries
Transmission electron microscopy
transmission electron microscopy

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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title = "Effect of penetration depth on electrical properties in Pd/Ge/Ti/Au ohmic contact to high-low-doped n-GaAs",
abstract = "Penetration depth of Pd/Ge/Ti/Au ohmicPenetrationcontact to high-low-doped n-GaAs has been investigated using cross-sectional transmission electron microscopy, and the results are used to interpret the electrical properties. The ohmic metals do not penetrate into the GaAs substrate at 300°C, but penetrate deeper than 1000 {\AA} into GaAs at 380°C. This is due to fast indiffusion of Au toward the GaAs substrate through the grain boundary of the PdGe compound, followed by formation of AuGa through reaction with GaAs. The deep penetration into GaAs at 380°C results in the lowest contact resistance of 0.43 Ωmmdue to direct contact of ohmic metals with the buried high-doped GaAs layer.",
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Effect of penetration depth on electrical properties in Pd/Ge/Ti/Au ohmic contact to high-low-doped n-GaAs. / Kwak, Joon Seop; Lee, Jong Lam; Baik, Hong Koo; Shin, Dong Won; Park, Chan Gyung; Kim, Haecheon.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 35, No. 7, 01.07.1996, p. 3841-3844.

Research output: Contribution to journalArticle

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T1 - Effect of penetration depth on electrical properties in Pd/Ge/Ti/Au ohmic contact to high-low-doped n-GaAs

AU - Kwak, Joon Seop

AU - Lee, Jong Lam

AU - Baik, Hong Koo

AU - Shin, Dong Won

AU - Park, Chan Gyung

AU - Kim, Haecheon

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AB - Penetration depth of Pd/Ge/Ti/Au ohmicPenetrationcontact to high-low-doped n-GaAs has been investigated using cross-sectional transmission electron microscopy, and the results are used to interpret the electrical properties. The ohmic metals do not penetrate into the GaAs substrate at 300°C, but penetrate deeper than 1000 Å into GaAs at 380°C. This is due to fast indiffusion of Au toward the GaAs substrate through the grain boundary of the PdGe compound, followed by formation of AuGa through reaction with GaAs. The deep penetration into GaAs at 380°C results in the lowest contact resistance of 0.43 Ωmmdue to direct contact of ohmic metals with the buried high-doped GaAs layer.

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