Abstract
Penetration depth of Pd/Ge/Ti/Au ohmicPenetrationcontact to high-low-doped n-GaAs has been investigated using cross-sectional transmission electron microscopy, and the results are used to interpret the electrical properties. The ohmic metals do not penetrate into the GaAs substrate at 300°C, but penetrate deeper than 1000 Å into GaAs at 380°C. This is due to fast indiffusion of Au toward the GaAs substrate through the grain boundary of the PdGe compound, followed by formation of AuGa through reaction with GaAs. The deep penetration into GaAs at 380°C results in the lowest contact resistance of 0.43 Ωmmdue to direct contact of ohmic metals with the buried high-doped GaAs layer.
| Original language | English |
|---|---|
| Pages (from-to) | 3841-3844 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 35 |
| Issue number | 7 |
| Publication status | Published - 1996 Jul 1 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
Cite this
}
Effect of penetration depth on electrical properties in Pd/Ge/Ti/Au ohmic contact to high-low-doped n-GaAs. / Kwak, Joon Seop; Lee, Jong Lam; Baik, Hong Koo; Shin, Dong Won; Park, Chan Gyung; Kim, Haecheon.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 35, No. 7, 01.07.1996, p. 3841-3844.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effect of penetration depth on electrical properties in Pd/Ge/Ti/Au ohmic contact to high-low-doped n-GaAs
AU - Kwak, Joon Seop
AU - Lee, Jong Lam
AU - Baik, Hong Koo
AU - Shin, Dong Won
AU - Park, Chan Gyung
AU - Kim, Haecheon
PY - 1996/7/1
Y1 - 1996/7/1
N2 - Penetration depth of Pd/Ge/Ti/Au ohmicPenetrationcontact to high-low-doped n-GaAs has been investigated using cross-sectional transmission electron microscopy, and the results are used to interpret the electrical properties. The ohmic metals do not penetrate into the GaAs substrate at 300°C, but penetrate deeper than 1000 Å into GaAs at 380°C. This is due to fast indiffusion of Au toward the GaAs substrate through the grain boundary of the PdGe compound, followed by formation of AuGa through reaction with GaAs. The deep penetration into GaAs at 380°C results in the lowest contact resistance of 0.43 Ωmmdue to direct contact of ohmic metals with the buried high-doped GaAs layer.
AB - Penetration depth of Pd/Ge/Ti/Au ohmicPenetrationcontact to high-low-doped n-GaAs has been investigated using cross-sectional transmission electron microscopy, and the results are used to interpret the electrical properties. The ohmic metals do not penetrate into the GaAs substrate at 300°C, but penetrate deeper than 1000 Å into GaAs at 380°C. This is due to fast indiffusion of Au toward the GaAs substrate through the grain boundary of the PdGe compound, followed by formation of AuGa through reaction with GaAs. The deep penetration into GaAs at 380°C results in the lowest contact resistance of 0.43 Ωmmdue to direct contact of ohmic metals with the buried high-doped GaAs layer.
UR - http://www.scopus.com/inward/record.url?scp=0030193797&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0030193797&partnerID=8YFLogxK
M3 - Article
VL - 35
SP - 3841
EP - 3844
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 7
ER -