We report a large transition temperature (TC) decrease in a VO2 thin film device under photo-irradiation. With the increasing photo-irradiation intensity (PIntensity) with a wavelength of 405 nm, the TC of the VO2 device decreased at a rate of ∼ 3.2 × 10 - 2 ° C W / cm 2 and reached as low as 40.0 °C at a PIntensity of 8.4 × 10 2 W / cm 2. While the change in TC is primarily due to the photothermal effect when the PIntensity is below 3.6 × 10 2 W / cm 2, both the photothermal and photo-induced carrier density effects contribute to the change in TC when the PIntensity is above 6.4 × 10 2 W / cm 2.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)