We report a large transition temperature (TC) decrease in a VO2 thin film device under photo-irradiation. With the increasing photo-irradiation intensity (PIntensity) with a wavelength of 405 nm, the TC of the VO2 device decreased at a rate of ∼ 3.2 × 10 - 2 ° C W / cm 2 and reached as low as 40.0 °C at a PIntensity of 8.4 × 10 2 W / cm 2. While the change in TC is primarily due to the photothermal effect when the PIntensity is below 3.6 × 10 2 W / cm 2, both the photothermal and photo-induced carrier density effects contribute to the change in TC when the PIntensity is above 6.4 × 10 2 W / cm 2.
Bibliographical noteFunding Information:
H. L. Ju and B. S. Mun would like to thank the Basic Science Research Program for support through the National Research Foundation of Korea (NRF) funded by the Korean Government (MOE) (Nos. NRF-2015R1D1A1A01059297 and NRF-2015R1A2A2A01004084). Part of this work was supported by the SRC Program through the NRF funded by the MOE (No. NRF-2015R1A5A1009962). This work was supported by the “GRI (GIST Research Institute)” Project through a grant provided by GIST in 2018. This work was also supported by the Yonsei University Research Fund (Post Doc. Researcher Supporting Program) of 2018 (Project No. 2018-12-0011).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)