Effect of plasma source power on the nanocrystallization of silicon thin films by reactive particle beam assisted chemical vapor deposition

Sun Gyu Choi, Hyung-Ho Park, Jin Nyoung Jang, Munpyo Hong, Kwang Ho Kwon

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The effect of radio frequency antenna power on the physical and chemical properties of nanocrystalline silicon deposited by reactive particle beam assisted chemical vapor deposition were systematically studied using various powers. Nanocrystalline Si embedded in an amorphous matrix was analyzed by X-ray diffraction and Raman spectroscopy. Films that were deposited under high power formed large grains due to high accelerated particle energy and high density in plasma. Using X-ray photoelectron spectroscopy, the chemical state of nanocrystalline silicon films was revealed to have Si-Si bonds. Further, an increase in antenna powers induced a roughened surface morphology, as well as changes in the dark conductivity and optical bandgap in Si films.

Original languageEnglish
JournalCeramics International
Volume38
Issue numberSUPPL. 1
DOIs
Publication statusPublished - 2012 Jan 1

Fingerprint

Nanocrystallization
Particle beams
Plasma sources
Silicon
Nanocrystalline silicon
Chemical vapor deposition
Thin films
Antennas
Optical band gaps
Chemical properties
Surface morphology
Raman spectroscopy
X ray photoelectron spectroscopy
Physical properties
Plasmas
X ray diffraction

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

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abstract = "The effect of radio frequency antenna power on the physical and chemical properties of nanocrystalline silicon deposited by reactive particle beam assisted chemical vapor deposition were systematically studied using various powers. Nanocrystalline Si embedded in an amorphous matrix was analyzed by X-ray diffraction and Raman spectroscopy. Films that were deposited under high power formed large grains due to high accelerated particle energy and high density in plasma. Using X-ray photoelectron spectroscopy, the chemical state of nanocrystalline silicon films was revealed to have Si-Si bonds. Further, an increase in antenna powers induced a roughened surface morphology, as well as changes in the dark conductivity and optical bandgap in Si films.",
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Effect of plasma source power on the nanocrystallization of silicon thin films by reactive particle beam assisted chemical vapor deposition. / Choi, Sun Gyu; Park, Hyung-Ho; Jang, Jin Nyoung; Hong, Munpyo; Kwon, Kwang Ho.

In: Ceramics International, Vol. 38, No. SUPPL. 1, 01.01.2012.

Research output: Contribution to journalArticle

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AU - Choi, Sun Gyu

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AU - Kwon, Kwang Ho

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AB - The effect of radio frequency antenna power on the physical and chemical properties of nanocrystalline silicon deposited by reactive particle beam assisted chemical vapor deposition were systematically studied using various powers. Nanocrystalline Si embedded in an amorphous matrix was analyzed by X-ray diffraction and Raman spectroscopy. Films that were deposited under high power formed large grains due to high accelerated particle energy and high density in plasma. Using X-ray photoelectron spectroscopy, the chemical state of nanocrystalline silicon films was revealed to have Si-Si bonds. Further, an increase in antenna powers induced a roughened surface morphology, as well as changes in the dark conductivity and optical bandgap in Si films.

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