Effect of Post-annealing on the Solar Cell Performance of CuZnSnS4 Thin Film Prepared by Sulfurization of Stacked Metal Precursor with HS Gas

Jung Hun Lee; Heon Jin Choi; Won Mok Kim; Jeung Hyun Jeong; Jong Keuk Park

doi:10.1109/PVSC.2018.8547941

Effect of Post-annealing on the Solar Cell Performance of CuZnSnS4 Thin Film Prepared by Sulfurization of Stacked Metal Precursor with HS Gas

Jung Hun Lee, Heon Jin Choi, Won Mok Kim, Jeung Hyun Jeong, Jong Keuk Park

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The influence of post-annealing on the solar cell performance of CuZnSnS4 (CZTS) thin film prepared by sulfurization of Zn/(Cu,Sn) metal precursor with H2S gas was investigated. Two-step annealing process at 450°C and then at 550°C was adopted for the sulfurization of the stacked precursor in the mixed N2+H2S atmosphere. The post-annealing was performed at 300°C in air after the deposition of CdS buffer layer and Ni/Al grid. In comparison to the CZTS solar cell prepared without post-annealing showing lower efficiency of 4.30%, improved solar cell efficiency of 6.02% with increased Voc (590 mV) and FF (56.2%) was observed for the CZTS solar cell prepared with post-annealing. By the analysis of Voc as a function of temperature and frequency-dependent carrier concentration, the improved cell efficiency was believed to be due to the reduced absorber/buffer interface recombination and bulk defects in CZTS.

Original language	English
Title of host publication	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	135-138
Number of pages	4
ISBN (Electronic)	9781538685297
DOIs	https://doi.org/10.1109/PVSC.2018.8547941
Publication status	Published - 2018 Nov 26
Event	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: 2018 Jun 10 → 2018 Jun 15

Publication series

Name	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

Conference

Conference	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/Territory	United States
City	Waikoloa Village
Period	18/6/10 → 18/6/15

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

All Science Journal Classification (ASJC) codes

Energy Engineering and Power Technology
Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/PVSC.2018.8547941

Cite this

Lee, J. H., Choi, H. J., Kim, W. M., Jeong, J. H., & Park, J. K. (2018). Effect of Post-annealing on the Solar Cell Performance of CuZnSnS4 Thin Film Prepared by Sulfurization of Stacked Metal Precursor with HS Gas. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (pp. 135-138). [8547941] (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2018.8547941

Lee, Jung Hun ; Choi, Heon Jin ; Kim, Won Mok et al. / Effect of Post-annealing on the Solar Cell Performance of CuZnSnS4 Thin Film Prepared by Sulfurization of Stacked Metal Precursor with HS Gas. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 135-138 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

@inproceedings{d9029031cb2b468ab34e1d2674ac9582,

title = "Effect of Post-annealing on the Solar Cell Performance of CuZnSnS4 Thin Film Prepared by Sulfurization of Stacked Metal Precursor with HS Gas",

abstract = "The influence of post-annealing on the solar cell performance of CuZnSnS4 (CZTS) thin film prepared by sulfurization of Zn/(Cu,Sn) metal precursor with H2S gas was investigated. Two-step annealing process at 450°C and then at 550°C was adopted for the sulfurization of the stacked precursor in the mixed N2+H2S atmosphere. The post-annealing was performed at 300°C in air after the deposition of CdS buffer layer and Ni/Al grid. In comparison to the CZTS solar cell prepared without post-annealing showing lower efficiency of 4.30%, improved solar cell efficiency of 6.02% with increased Voc (590 mV) and FF (56.2%) was observed for the CZTS solar cell prepared with post-annealing. By the analysis of Voc as a function of temperature and frequency-dependent carrier concentration, the improved cell efficiency was believed to be due to the reduced absorber/buffer interface recombination and bulk defects in CZTS.",

author = "Lee, {Jung Hun} and Choi, {Heon Jin} and Kim, {Won Mok} and Jeong, {Jeung Hyun} and Park, {Jong Keuk}",

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doi = "10.1109/PVSC.2018.8547941",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Lee, JH, Choi, HJ, Kim, WM, Jeong, JH & Park, JK 2018, Effect of Post-annealing on the Solar Cell Performance of CuZnSnS4 Thin Film Prepared by Sulfurization of Stacked Metal Precursor with HS Gas. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC., 8547941, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, Institute of Electrical and Electronics Engineers Inc., pp. 135-138, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 18/6/10. https://doi.org/10.1109/PVSC.2018.8547941

Effect of Post-annealing on the Solar Cell Performance of CuZnSnS4 Thin Film Prepared by Sulfurization of Stacked Metal Precursor with HS Gas. / Lee, Jung Hun; Choi, Heon Jin; Kim, Won Mok et al.

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. p. 135-138 8547941 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Effect of Post-annealing on the Solar Cell Performance of CuZnSnS4 Thin Film Prepared by Sulfurization of Stacked Metal Precursor with HS Gas

AU - Lee, Jung Hun

AU - Choi, Heon Jin

AU - Kim, Won Mok

AU - Jeong, Jeung Hyun

AU - Park, Jong Keuk

PY - 2018/11/26

Y1 - 2018/11/26

N2 - The influence of post-annealing on the solar cell performance of CuZnSnS4 (CZTS) thin film prepared by sulfurization of Zn/(Cu,Sn) metal precursor with H2S gas was investigated. Two-step annealing process at 450°C and then at 550°C was adopted for the sulfurization of the stacked precursor in the mixed N2+H2S atmosphere. The post-annealing was performed at 300°C in air after the deposition of CdS buffer layer and Ni/Al grid. In comparison to the CZTS solar cell prepared without post-annealing showing lower efficiency of 4.30%, improved solar cell efficiency of 6.02% with increased Voc (590 mV) and FF (56.2%) was observed for the CZTS solar cell prepared with post-annealing. By the analysis of Voc as a function of temperature and frequency-dependent carrier concentration, the improved cell efficiency was believed to be due to the reduced absorber/buffer interface recombination and bulk defects in CZTS.

AB - The influence of post-annealing on the solar cell performance of CuZnSnS4 (CZTS) thin film prepared by sulfurization of Zn/(Cu,Sn) metal precursor with H2S gas was investigated. Two-step annealing process at 450°C and then at 550°C was adopted for the sulfurization of the stacked precursor in the mixed N2+H2S atmosphere. The post-annealing was performed at 300°C in air after the deposition of CdS buffer layer and Ni/Al grid. In comparison to the CZTS solar cell prepared without post-annealing showing lower efficiency of 4.30%, improved solar cell efficiency of 6.02% with increased Voc (590 mV) and FF (56.2%) was observed for the CZTS solar cell prepared with post-annealing. By the analysis of Voc as a function of temperature and frequency-dependent carrier concentration, the improved cell efficiency was believed to be due to the reduced absorber/buffer interface recombination and bulk defects in CZTS.

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Lee JH, Choi HJ, Kim WM, Jeong JH, Park JK. Effect of Post-annealing on the Solar Cell Performance of CuZnSnS4 Thin Film Prepared by Sulfurization of Stacked Metal Precursor with HS Gas. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc. 2018. p. 135-138. 8547941. (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). doi: 10.1109/PVSC.2018.8547941

Effect of Post-annealing on the Solar Cell Performance of CuZnSnS4 Thin Film Prepared by Sulfurization of Stacked Metal Precursor with HS Gas

Abstract

Publication series

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Bibliographical note

All Science Journal Classification (ASJC) codes

UN SDGs

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