Abstract
The influence of post-annealing on the solar cell performance of CuZnSnS4 (CZTS) thin film prepared by sulfurization of Zn/(Cu,Sn) metal precursor with H2S gas was investigated. Two-step annealing process at 450°C and then at 550°C was adopted for the sulfurization of the stacked precursor in the mixed N2+H2S atmosphere. The post-annealing was performed at 300°C in air after the deposition of CdS buffer layer and Ni/Al grid. In comparison to the CZTS solar cell prepared without post-annealing showing lower efficiency of 4.30%, improved solar cell efficiency of 6.02% with increased Voc (590 mV) and FF (56.2%) was observed for the CZTS solar cell prepared with post-annealing. By the analysis of Voc as a function of temperature and frequency-dependent carrier concentration, the improved cell efficiency was believed to be due to the reduced absorber/buffer interface recombination and bulk defects in CZTS.
| Original language | English |
|---|---|
| Title of host publication | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 135-138 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781538685297 |
| DOIs | |
| Publication status | Published - 2018 Nov 26 |
| Event | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: 2018 Jun 10 → 2018 Jun 15 |
Publication series
| Name | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC |
|---|
Conference
| Conference | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 |
|---|---|
| Country | United States |
| City | Waikoloa Village |
| Period | 18/6/10 → 18/6/15 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Energy Engineering and Power Technology
- Renewable Energy, Sustainability and the Environment
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
}
Effect of Post-annealing on the Solar Cell Performance of CuZnSnS4 Thin Film Prepared by Sulfurization of Stacked Metal Precursor with HS Gas. / Lee, Jung Hun; Choi, Heon Jin; Kim, Won Mok; Jeong, Jeung Hyun; Park, Jong Keuk.
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. p. 135-138 8547941 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Effect of Post-annealing on the Solar Cell Performance of CuZnSnS4 Thin Film Prepared by Sulfurization of Stacked Metal Precursor with HS Gas
AU - Lee, Jung Hun
AU - Choi, Heon Jin
AU - Kim, Won Mok
AU - Jeong, Jeung Hyun
AU - Park, Jong Keuk
PY - 2018/11/26
Y1 - 2018/11/26
N2 - The influence of post-annealing on the solar cell performance of CuZnSnS4 (CZTS) thin film prepared by sulfurization of Zn/(Cu,Sn) metal precursor with H2S gas was investigated. Two-step annealing process at 450°C and then at 550°C was adopted for the sulfurization of the stacked precursor in the mixed N2+H2S atmosphere. The post-annealing was performed at 300°C in air after the deposition of CdS buffer layer and Ni/Al grid. In comparison to the CZTS solar cell prepared without post-annealing showing lower efficiency of 4.30%, improved solar cell efficiency of 6.02% with increased Voc (590 mV) and FF (56.2%) was observed for the CZTS solar cell prepared with post-annealing. By the analysis of Voc as a function of temperature and frequency-dependent carrier concentration, the improved cell efficiency was believed to be due to the reduced absorber/buffer interface recombination and bulk defects in CZTS.
AB - The influence of post-annealing on the solar cell performance of CuZnSnS4 (CZTS) thin film prepared by sulfurization of Zn/(Cu,Sn) metal precursor with H2S gas was investigated. Two-step annealing process at 450°C and then at 550°C was adopted for the sulfurization of the stacked precursor in the mixed N2+H2S atmosphere. The post-annealing was performed at 300°C in air after the deposition of CdS buffer layer and Ni/Al grid. In comparison to the CZTS solar cell prepared without post-annealing showing lower efficiency of 4.30%, improved solar cell efficiency of 6.02% with increased Voc (590 mV) and FF (56.2%) was observed for the CZTS solar cell prepared with post-annealing. By the analysis of Voc as a function of temperature and frequency-dependent carrier concentration, the improved cell efficiency was believed to be due to the reduced absorber/buffer interface recombination and bulk defects in CZTS.
UR - http://www.scopus.com/inward/record.url?scp=85059900693&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85059900693&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2018.8547941
DO - 10.1109/PVSC.2018.8547941
M3 - Conference contribution
AN - SCOPUS:85059900693
T3 - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
SP - 135
EP - 138
BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
PB - Institute of Electrical and Electronics Engineers Inc.
ER -