Effect of post-etch cleaning on Ru-capped extreme ultraviolet lithography photomask

Jisook Oh; Chanhyoung Park; Dongwan Seo; Juneui Jung; Sangwoo Lim

doi:10.1016/j.apsusc.2012.01.063

Effect of post-etch cleaning on Ru-capped extreme ultraviolet lithography photomask

Jisook Oh, Chanhyoung Park, Dongwan Seo, Juneui Jung, Sangwoo Lim

Department of Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article

Abstract

Ru-capped extreme ultraviolet lithography photomasks require cleaning after patterning of the absorber layer. In this study, it was confirmed that, during Cl ₂ dry etching to remove the absorber layer, RuCl ₃ was formed on the Ru capping layer surface, and the surface roughness thereby deteriorated. Therefore, the changes in RuCl ₃ formation and surface roughness with various cleaning processes were investigated. Among the treatments used, i.e., sulfuric peroxide mixture, an ammonia peroxide mixture or ozonated water (DIO ₃ ), DIO ₃ exhibited the most effective Cl removal efficiency and surface roughness recovery. DIO ₃ treatment successfully reduced the Cl-terminated Ru surface to its original state and decreased the surface roughness to the pre-Cl ₂ -etched Ru value.

Original language	English
Pages (from-to)	4702-4706
Number of pages	5
Journal	Applied Surface Science
Volume	258
Issue number	10
DOIs	https://doi.org/10.1016/j.apsusc.2012.01.063
Publication status	Published - 2012 Mar 1

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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Oh, J., Park, C., Seo, D., Jung, J., & Lim, S. (2012). Effect of post-etch cleaning on Ru-capped extreme ultraviolet lithography photomask. Applied Surface Science, 258(10), 4702-4706. https://doi.org/10.1016/j.apsusc.2012.01.063

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title = "Effect of post-etch cleaning on Ru-capped extreme ultraviolet lithography photomask",

abstract = " Ru-capped extreme ultraviolet lithography photomasks require cleaning after patterning of the absorber layer. In this study, it was confirmed that, during Cl 2 dry etching to remove the absorber layer, RuCl 3 was formed on the Ru capping layer surface, and the surface roughness thereby deteriorated. Therefore, the changes in RuCl 3 formation and surface roughness with various cleaning processes were investigated. Among the treatments used, i.e., sulfuric peroxide mixture, an ammonia peroxide mixture or ozonated water (DIO 3 ), DIO 3 exhibited the most effective Cl removal efficiency and surface roughness recovery. DIO 3 treatment successfully reduced the Cl-terminated Ru surface to its original state and decreased the surface roughness to the pre-Cl 2 -etched Ru value.",

author = "Jisook Oh and Chanhyoung Park and Dongwan Seo and Juneui Jung and Sangwoo Lim",

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AU - Jung, Juneui

AU - Lim, Sangwoo

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AB - Ru-capped extreme ultraviolet lithography photomasks require cleaning after patterning of the absorber layer. In this study, it was confirmed that, during Cl 2 dry etching to remove the absorber layer, RuCl 3 was formed on the Ru capping layer surface, and the surface roughness thereby deteriorated. Therefore, the changes in RuCl 3 formation and surface roughness with various cleaning processes were investigated. Among the treatments used, i.e., sulfuric peroxide mixture, an ammonia peroxide mixture or ozonated water (DIO 3 ), DIO 3 exhibited the most effective Cl removal efficiency and surface roughness recovery. DIO 3 treatment successfully reduced the Cl-terminated Ru surface to its original state and decreased the surface roughness to the pre-Cl 2 -etched Ru value.

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