Effect of post-etch cleaning on Ru-capped extreme ultraviolet lithography photomask

Jisook Oh; Chanhyoung Park; Dongwan Seo; Juneui Jung; Sangwoo Lim

doi:10.1016/j.apsusc.2012.01.063

Effect of post-etch cleaning on Ru-capped extreme ultraviolet lithography photomask

Jisook Oh, Chanhyoung Park, Dongwan Seo, Juneui Jung, Sangwoo Lim

Department of Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Ru-capped extreme ultraviolet lithography photomasks require cleaning after patterning of the absorber layer. In this study, it was confirmed that, during Cl ₂ dry etching to remove the absorber layer, RuCl ₃ was formed on the Ru capping layer surface, and the surface roughness thereby deteriorated. Therefore, the changes in RuCl ₃ formation and surface roughness with various cleaning processes were investigated. Among the treatments used, i.e., sulfuric peroxide mixture, an ammonia peroxide mixture or ozonated water (DIO ₃ ), DIO ₃ exhibited the most effective Cl removal efficiency and surface roughness recovery. DIO ₃ treatment successfully reduced the Cl-terminated Ru surface to its original state and decreased the surface roughness to the pre-Cl ₂ -etched Ru value.

Original language	English
Pages (from-to)	4702-4706
Number of pages	5
Journal	Applied Surface Science
Volume	258
Issue number	10
DOIs	https://doi.org/10.1016/j.apsusc.2012.01.063
Publication status	Published - 2012 Mar 1

Bibliographical note

Funding Information:
This work was supported by Hynix Semiconductor Inc. This work was also supported by the Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( 2009-0093823 ).

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2012.01.063

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@article{aad27eb626f045198520840eed25772c,

title = "Effect of post-etch cleaning on Ru-capped extreme ultraviolet lithography photomask",

abstract = " Ru-capped extreme ultraviolet lithography photomasks require cleaning after patterning of the absorber layer. In this study, it was confirmed that, during Cl 2 dry etching to remove the absorber layer, RuCl 3 was formed on the Ru capping layer surface, and the surface roughness thereby deteriorated. Therefore, the changes in RuCl 3 formation and surface roughness with various cleaning processes were investigated. Among the treatments used, i.e., sulfuric peroxide mixture, an ammonia peroxide mixture or ozonated water (DIO 3 ), DIO 3 exhibited the most effective Cl removal efficiency and surface roughness recovery. DIO 3 treatment successfully reduced the Cl-terminated Ru surface to its original state and decreased the surface roughness to the pre-Cl 2 -etched Ru value.",

author = "Jisook Oh and Chanhyoung Park and Dongwan Seo and Juneui Jung and Sangwoo Lim",

note = "Funding Information: This work was supported by Hynix Semiconductor Inc. This work was also supported by the Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( 2009-0093823 ).",

year = "2012",

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doi = "10.1016/j.apsusc.2012.01.063",

language = "English",

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AU - Oh, Jisook

AU - Park, Chanhyoung

AU - Seo, Dongwan

AU - Jung, Juneui

AU - Lim, Sangwoo

N1 - Funding Information: This work was supported by Hynix Semiconductor Inc. This work was also supported by the Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( 2009-0093823 ).

PY - 2012/3/1

Y1 - 2012/3/1

N2 - Ru-capped extreme ultraviolet lithography photomasks require cleaning after patterning of the absorber layer. In this study, it was confirmed that, during Cl 2 dry etching to remove the absorber layer, RuCl 3 was formed on the Ru capping layer surface, and the surface roughness thereby deteriorated. Therefore, the changes in RuCl 3 formation and surface roughness with various cleaning processes were investigated. Among the treatments used, i.e., sulfuric peroxide mixture, an ammonia peroxide mixture or ozonated water (DIO 3 ), DIO 3 exhibited the most effective Cl removal efficiency and surface roughness recovery. DIO 3 treatment successfully reduced the Cl-terminated Ru surface to its original state and decreased the surface roughness to the pre-Cl 2 -etched Ru value.

AB - Ru-capped extreme ultraviolet lithography photomasks require cleaning after patterning of the absorber layer. In this study, it was confirmed that, during Cl 2 dry etching to remove the absorber layer, RuCl 3 was formed on the Ru capping layer surface, and the surface roughness thereby deteriorated. Therefore, the changes in RuCl 3 formation and surface roughness with various cleaning processes were investigated. Among the treatments used, i.e., sulfuric peroxide mixture, an ammonia peroxide mixture or ozonated water (DIO 3 ), DIO 3 exhibited the most effective Cl removal efficiency and surface roughness recovery. DIO 3 treatment successfully reduced the Cl-terminated Ru surface to its original state and decreased the surface roughness to the pre-Cl 2 -etched Ru value.

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Effect of post-etch cleaning on Ru-capped extreme ultraviolet lithography photomask

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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