Ru-capped extreme ultraviolet lithography photomasks require cleaning after patterning of the absorber layer. In this study, it was confirmed that, during Cl 2 dry etching to remove the absorber layer, RuCl 3 was formed on the Ru capping layer surface, and the surface roughness thereby deteriorated. Therefore, the changes in RuCl 3 formation and surface roughness with various cleaning processes were investigated. Among the treatments used, i.e., sulfuric peroxide mixture, an ammonia peroxide mixture or ozonated water (DIO 3 ), DIO 3 exhibited the most effective Cl removal efficiency and surface roughness recovery. DIO 3 treatment successfully reduced the Cl-terminated Ru surface to its original state and decreased the surface roughness to the pre-Cl 2 -etched Ru value.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films