Effect of post-etch cleaning on Ru-capped extreme ultraviolet lithography photomask

Jisook Oh, Chanhyoung Park, Dongwan Seo, Juneui Jung, Sangwoo Lim

Research output: Contribution to journalArticle


Ru-capped extreme ultraviolet lithography photomasks require cleaning after patterning of the absorber layer. In this study, it was confirmed that, during Cl 2 dry etching to remove the absorber layer, RuCl 3 was formed on the Ru capping layer surface, and the surface roughness thereby deteriorated. Therefore, the changes in RuCl 3 formation and surface roughness with various cleaning processes were investigated. Among the treatments used, i.e., sulfuric peroxide mixture, an ammonia peroxide mixture or ozonated water (DIO 3 ), DIO 3 exhibited the most effective Cl removal efficiency and surface roughness recovery. DIO 3 treatment successfully reduced the Cl-terminated Ru surface to its original state and decreased the surface roughness to the pre-Cl 2 -etched Ru value.

Original languageEnglish
Pages (from-to)4702-4706
Number of pages5
JournalApplied Surface Science
Issue number10
Publication statusPublished - 2012 Mar 1

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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