Effect of precursor ratio on the structural properties of ZnO thin films deposited by low pressure MOCVD

H. M. Kang, J. H. Jeong, J. K. Park, K. S. Lee, W. M. Kim, H. J. Choi, Y. J. Baik

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The effect of precursor ratio (H 2O/DEZ) on the texture orientation, surface morphology, optical transparency and electrical resistivity of ZnO thin films deposited by MOCVD was investigated. Deposition temperature and pressure were fixed at 120 °C and 0.67 torr, respectively. The precursor ratio was varied between 0.1 and 4. It was found that the texture orientation changed from 〈0002〉 to 〈1120〉 with increase of the precursor ratio. 〈1120〉 textured film shows well facetted tetrapod like rough surface morphology, which scatters the incident light very effectively. The electrical resistivity was in the range of about 0.1 Ω cm in the undoped state, which was found to decrease with increase of the film thickness and decrease of the precursor ratio.

Original languageEnglish
Pages (from-to)3669-3672
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume12
Issue number4
DOIs
Publication statusPublished - 2012 Jul 6

Fingerprint

Light
Pressure
Temperature

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Kang, H. M. ; Jeong, J. H. ; Park, J. K. ; Lee, K. S. ; Kim, W. M. ; Choi, H. J. ; Baik, Y. J. / Effect of precursor ratio on the structural properties of ZnO thin films deposited by low pressure MOCVD. In: Journal of Nanoscience and Nanotechnology. 2012 ; Vol. 12, No. 4. pp. 3669-3672.
@article{2ce719e17aca4c2ca47a7b890a4cc1b8,
title = "Effect of precursor ratio on the structural properties of ZnO thin films deposited by low pressure MOCVD",
abstract = "The effect of precursor ratio (H 2O/DEZ) on the texture orientation, surface morphology, optical transparency and electrical resistivity of ZnO thin films deposited by MOCVD was investigated. Deposition temperature and pressure were fixed at 120 °C and 0.67 torr, respectively. The precursor ratio was varied between 0.1 and 4. It was found that the texture orientation changed from 〈0002〉 to 〈1120〉 with increase of the precursor ratio. 〈1120〉 textured film shows well facetted tetrapod like rough surface morphology, which scatters the incident light very effectively. The electrical resistivity was in the range of about 0.1 Ω cm in the undoped state, which was found to decrease with increase of the film thickness and decrease of the precursor ratio.",
author = "Kang, {H. M.} and Jeong, {J. H.} and Park, {J. K.} and Lee, {K. S.} and Kim, {W. M.} and Choi, {H. J.} and Baik, {Y. J.}",
year = "2012",
month = "7",
day = "6",
doi = "10.1166/jnn.2012.5631",
language = "English",
volume = "12",
pages = "3669--3672",
journal = "Journal of Nanoscience and Nanotechnology",
issn = "1533-4880",
publisher = "American Scientific Publishers",
number = "4",

}

Effect of precursor ratio on the structural properties of ZnO thin films deposited by low pressure MOCVD. / Kang, H. M.; Jeong, J. H.; Park, J. K.; Lee, K. S.; Kim, W. M.; Choi, H. J.; Baik, Y. J.

In: Journal of Nanoscience and Nanotechnology, Vol. 12, No. 4, 06.07.2012, p. 3669-3672.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of precursor ratio on the structural properties of ZnO thin films deposited by low pressure MOCVD

AU - Kang, H. M.

AU - Jeong, J. H.

AU - Park, J. K.

AU - Lee, K. S.

AU - Kim, W. M.

AU - Choi, H. J.

AU - Baik, Y. J.

PY - 2012/7/6

Y1 - 2012/7/6

N2 - The effect of precursor ratio (H 2O/DEZ) on the texture orientation, surface morphology, optical transparency and electrical resistivity of ZnO thin films deposited by MOCVD was investigated. Deposition temperature and pressure were fixed at 120 °C and 0.67 torr, respectively. The precursor ratio was varied between 0.1 and 4. It was found that the texture orientation changed from 〈0002〉 to 〈1120〉 with increase of the precursor ratio. 〈1120〉 textured film shows well facetted tetrapod like rough surface morphology, which scatters the incident light very effectively. The electrical resistivity was in the range of about 0.1 Ω cm in the undoped state, which was found to decrease with increase of the film thickness and decrease of the precursor ratio.

AB - The effect of precursor ratio (H 2O/DEZ) on the texture orientation, surface morphology, optical transparency and electrical resistivity of ZnO thin films deposited by MOCVD was investigated. Deposition temperature and pressure were fixed at 120 °C and 0.67 torr, respectively. The precursor ratio was varied between 0.1 and 4. It was found that the texture orientation changed from 〈0002〉 to 〈1120〉 with increase of the precursor ratio. 〈1120〉 textured film shows well facetted tetrapod like rough surface morphology, which scatters the incident light very effectively. The electrical resistivity was in the range of about 0.1 Ω cm in the undoped state, which was found to decrease with increase of the film thickness and decrease of the precursor ratio.

UR - http://www.scopus.com/inward/record.url?scp=84863321913&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863321913&partnerID=8YFLogxK

U2 - 10.1166/jnn.2012.5631

DO - 10.1166/jnn.2012.5631

M3 - Article

C2 - 22849193

AN - SCOPUS:84863321913

VL - 12

SP - 3669

EP - 3672

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

SN - 1533-4880

IS - 4

ER -