Effect of prepared GaAs surface on the sulfidation with (NH4)2Sx solution

Min Gu Kang, Hyung-Ho Park

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

Surface properties of wet-cleaned or successively passivated GaAs with (NH4)2Sx solution were analyzed using x-ray photoelectron spectroscopy. All the treatments were carried out in a glove box under nitrogen controlled atmosphere. Every cleaning process with HCl or H3PO4 solution produced elemental As and the amount depends on the etching capability of acid to GaAs. Successive sulfidation treatment resulted in the formation of an As-S bond, and the observed quantity of the arsenic sulfide was closely related to the amount of elemental As. In particular, the As-S was hardly observed in the sulfidation treated GaAs surface after NH4OH treatment because elemental As had not been produced by the NH4OH treatment. The in situ annealed GaAs surface at 600°C contained a large amount of elemental Ga and showed an effective formation of Ga-S after the sulfidation treatment. Therefore, it could be assured that the elemental forms of As and Ga bind with S through the sulfidation treatment using a (NH4)2Sx solution.

Original languageEnglish
Pages (from-to)88-92
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume17
Issue number1
DOIs
Publication statusPublished - 1999 Jan 1

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sulfidation
Photoelectron spectroscopy
Arsenic
Surface properties
Etching
Cleaning
Protective atmospheres
gloves
Nitrogen
controlled atmospheres
X rays
Acids
arsenic
surface properties
cleaning
x ray spectroscopy
boxes
gallium arsenide
sulfides
etching

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

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abstract = "Surface properties of wet-cleaned or successively passivated GaAs with (NH4)2Sx solution were analyzed using x-ray photoelectron spectroscopy. All the treatments were carried out in a glove box under nitrogen controlled atmosphere. Every cleaning process with HCl or H3PO4 solution produced elemental As and the amount depends on the etching capability of acid to GaAs. Successive sulfidation treatment resulted in the formation of an As-S bond, and the observed quantity of the arsenic sulfide was closely related to the amount of elemental As. In particular, the As-S was hardly observed in the sulfidation treated GaAs surface after NH4OH treatment because elemental As had not been produced by the NH4OH treatment. The in situ annealed GaAs surface at 600°C contained a large amount of elemental Ga and showed an effective formation of Ga-S after the sulfidation treatment. Therefore, it could be assured that the elemental forms of As and Ga bind with S through the sulfidation treatment using a (NH4)2Sx solution.",
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Effect of prepared GaAs surface on the sulfidation with (NH4)2Sx solution. / Kang, Min Gu; Park, Hyung-Ho.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 17, No. 1, 01.01.1999, p. 88-92.

Research output: Contribution to journalArticle

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N2 - Surface properties of wet-cleaned or successively passivated GaAs with (NH4)2Sx solution were analyzed using x-ray photoelectron spectroscopy. All the treatments were carried out in a glove box under nitrogen controlled atmosphere. Every cleaning process with HCl or H3PO4 solution produced elemental As and the amount depends on the etching capability of acid to GaAs. Successive sulfidation treatment resulted in the formation of an As-S bond, and the observed quantity of the arsenic sulfide was closely related to the amount of elemental As. In particular, the As-S was hardly observed in the sulfidation treated GaAs surface after NH4OH treatment because elemental As had not been produced by the NH4OH treatment. The in situ annealed GaAs surface at 600°C contained a large amount of elemental Ga and showed an effective formation of Ga-S after the sulfidation treatment. Therefore, it could be assured that the elemental forms of As and Ga bind with S through the sulfidation treatment using a (NH4)2Sx solution.

AB - Surface properties of wet-cleaned or successively passivated GaAs with (NH4)2Sx solution were analyzed using x-ray photoelectron spectroscopy. All the treatments were carried out in a glove box under nitrogen controlled atmosphere. Every cleaning process with HCl or H3PO4 solution produced elemental As and the amount depends on the etching capability of acid to GaAs. Successive sulfidation treatment resulted in the formation of an As-S bond, and the observed quantity of the arsenic sulfide was closely related to the amount of elemental As. In particular, the As-S was hardly observed in the sulfidation treated GaAs surface after NH4OH treatment because elemental As had not been produced by the NH4OH treatment. The in situ annealed GaAs surface at 600°C contained a large amount of elemental Ga and showed an effective formation of Ga-S after the sulfidation treatment. Therefore, it could be assured that the elemental forms of As and Ga bind with S through the sulfidation treatment using a (NH4)2Sx solution.

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