Effect of prepared GaAs surface on the sulfidation with (NH₄)₂S_x solution

Chemistry

• Chemical Element 100%
• Aqueous Solution 80%
• Surface 60%
• Amount 60%
• Chemical Bond 20%
• Nitrogen 20%
• Photoelectron Spectroscopy 20%
• Controlled Atmosphere 20%
• Procedure 20%
• Acid 20%
• Etching 20%
• Cleaning 20%
• Arsenic Sulfides 20%

Earth and Planetary Sciences

• Sulfidation 100%
• Amount 80%
• Nitrogen 20%
• In Situ 20%
• Surface Property 20%
• Controlled Atmosphere 20%
• Photoelectron Spectroscopy 20%
• Shape 20%
• Acid 20%
• Cleaning 20%
• Etching 20%
• Glove 20%

Material Science

• Gallium Arsenide 100%
• Solution 80%
• Surface 60%
• Surface Property 20%
• Etching 20%
• Protective Atmosphere 20%