Effect of Pt layers on the photoelectrochemical properties of a WO3/p-Si electrode

Ki Hyun Yoon, Dong Kyun Seo, Yong Soo Cho, Dong Heon Kang

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

The effect of Pt deposition on the photoelectrochemical properties of a WO3/p-Si electrode was studied with regard to hydrogen evolution, photocurrent transient, and chemical stability. Deposition of Pt layers made it possible for photocurrent onset potential to be shifted to a more positive value and both the photocurrent density and hydrogen evolution rate were increased. These phenomena can be explained by the fact that Pt loading decreases the overpotentials in the reduction reaction at the electrode/electrolyte interfaces to make electron transfer faster, as well as decrease the recombination rate of carriers. The influences of the Pt layer were confirmed by investigating the photocurrent transient behaviors. In the case of the Pt/WO3/p-Si electrode, particularly high quantum efficiencies were obtained in a wavelength range of 430-700 nm, possibly due to inelastic electron-electron scattering. The Pt/WO3/p-Si electrodes did not show any detectable corrosion after illumination for 5 h according to the observation of surface microstructures.

Original languageEnglish
Pages (from-to)3954-3959
Number of pages6
JournalJournal of Applied Physics
Volume84
Issue number7
DOIs
Publication statusPublished - 1998 Oct 1

Fingerprint

photocurrents
electrodes
hydrogen
quantum efficiency
corrosion
electron transfer
electron scattering
illumination
electrolytes
microstructure
wavelengths
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Yoon, Ki Hyun ; Seo, Dong Kyun ; Cho, Yong Soo ; Kang, Dong Heon. / Effect of Pt layers on the photoelectrochemical properties of a WO3/p-Si electrode. In: Journal of Applied Physics. 1998 ; Vol. 84, No. 7. pp. 3954-3959.
@article{d70792c3c7fa4b6c931fbba16cd07693,
title = "Effect of Pt layers on the photoelectrochemical properties of a WO3/p-Si electrode",
abstract = "The effect of Pt deposition on the photoelectrochemical properties of a WO3/p-Si electrode was studied with regard to hydrogen evolution, photocurrent transient, and chemical stability. Deposition of Pt layers made it possible for photocurrent onset potential to be shifted to a more positive value and both the photocurrent density and hydrogen evolution rate were increased. These phenomena can be explained by the fact that Pt loading decreases the overpotentials in the reduction reaction at the electrode/electrolyte interfaces to make electron transfer faster, as well as decrease the recombination rate of carriers. The influences of the Pt layer were confirmed by investigating the photocurrent transient behaviors. In the case of the Pt/WO3/p-Si electrode, particularly high quantum efficiencies were obtained in a wavelength range of 430-700 nm, possibly due to inelastic electron-electron scattering. The Pt/WO3/p-Si electrodes did not show any detectable corrosion after illumination for 5 h according to the observation of surface microstructures.",
author = "Yoon, {Ki Hyun} and Seo, {Dong Kyun} and Cho, {Yong Soo} and Kang, {Dong Heon}",
year = "1998",
month = "10",
day = "1",
doi = "10.1063/1.368573",
language = "English",
volume = "84",
pages = "3954--3959",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

Effect of Pt layers on the photoelectrochemical properties of a WO3/p-Si electrode. / Yoon, Ki Hyun; Seo, Dong Kyun; Cho, Yong Soo; Kang, Dong Heon.

In: Journal of Applied Physics, Vol. 84, No. 7, 01.10.1998, p. 3954-3959.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of Pt layers on the photoelectrochemical properties of a WO3/p-Si electrode

AU - Yoon, Ki Hyun

AU - Seo, Dong Kyun

AU - Cho, Yong Soo

AU - Kang, Dong Heon

PY - 1998/10/1

Y1 - 1998/10/1

N2 - The effect of Pt deposition on the photoelectrochemical properties of a WO3/p-Si electrode was studied with regard to hydrogen evolution, photocurrent transient, and chemical stability. Deposition of Pt layers made it possible for photocurrent onset potential to be shifted to a more positive value and both the photocurrent density and hydrogen evolution rate were increased. These phenomena can be explained by the fact that Pt loading decreases the overpotentials in the reduction reaction at the electrode/electrolyte interfaces to make electron transfer faster, as well as decrease the recombination rate of carriers. The influences of the Pt layer were confirmed by investigating the photocurrent transient behaviors. In the case of the Pt/WO3/p-Si electrode, particularly high quantum efficiencies were obtained in a wavelength range of 430-700 nm, possibly due to inelastic electron-electron scattering. The Pt/WO3/p-Si electrodes did not show any detectable corrosion after illumination for 5 h according to the observation of surface microstructures.

AB - The effect of Pt deposition on the photoelectrochemical properties of a WO3/p-Si electrode was studied with regard to hydrogen evolution, photocurrent transient, and chemical stability. Deposition of Pt layers made it possible for photocurrent onset potential to be shifted to a more positive value and both the photocurrent density and hydrogen evolution rate were increased. These phenomena can be explained by the fact that Pt loading decreases the overpotentials in the reduction reaction at the electrode/electrolyte interfaces to make electron transfer faster, as well as decrease the recombination rate of carriers. The influences of the Pt layer were confirmed by investigating the photocurrent transient behaviors. In the case of the Pt/WO3/p-Si electrode, particularly high quantum efficiencies were obtained in a wavelength range of 430-700 nm, possibly due to inelastic electron-electron scattering. The Pt/WO3/p-Si electrodes did not show any detectable corrosion after illumination for 5 h according to the observation of surface microstructures.

UR - http://www.scopus.com/inward/record.url?scp=0012503106&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0012503106&partnerID=8YFLogxK

U2 - 10.1063/1.368573

DO - 10.1063/1.368573

M3 - Article

AN - SCOPUS:0012503106

VL - 84

SP - 3954

EP - 3959

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 7

ER -