Abstract
Resistive random-access memory (ReRAM) devices for cross-point array structures require selector elements to suppress the sneak current though neighboring cells. Niobium oxide is a promising candidate for one selector-one ReRAM (1S1R) device because of its diverse electrical characteristics such as resistance threshold switching in NbO2 and resistance memory switching in Nb2O5. In this study, a new method to fabricate a self-formed 1S1R device is suggested, which uses the top electrode Pt sputtering process. During the Pt sputtering of the top electrode, it was observed that the Nb4+ in NbO2-x layer was oxidized into Nb5+, resulting in Nb2O5-rich films. Such self-formed Nb2O5/NbO2-x layer exhibits dissimilar resistance switching behaviors depending on the compliance current during memory operation. A switching model is proposed based on the resistance switching characteristics of the Nb2O5/NbO2-x layer on the compliance current during memory operation.
Original language | English |
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Pages (from-to) | 14384-14390 |
Number of pages | 7 |
Journal | Journal of Materials Science: Materials in Electronics |
Volume | 31 |
Issue number | 17 |
DOIs | |
Publication status | Published - 2020 Sep 1 |
Bibliographical note
Publisher Copyright:© 2020, Springer Science+Business Media, LLC, part of Springer Nature.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering