Effect of Pt top electrode deposition on the valence state and resistance switching behavior of NbO2-x

Jimin Lee, Jaeyeon Kim, Taeho Kim, Hyunchul Sohn

Research output: Contribution to journalArticlepeer-review

Abstract

Resistive random-access memory (ReRAM) devices for cross-point array structures require selector elements to suppress the sneak current though neighboring cells. Niobium oxide is a promising candidate for one selector-one ReRAM (1S1R) device because of its diverse electrical characteristics such as resistance threshold switching in NbO2 and resistance memory switching in Nb2O5. In this study, a new method to fabricate a self-formed 1S1R device is suggested, which uses the top electrode Pt sputtering process. During the Pt sputtering of the top electrode, it was observed that the Nb4+ in NbO2-x layer was oxidized into Nb5+, resulting in Nb2O5-rich films. Such self-formed Nb2O5/NbO2-x layer exhibits dissimilar resistance switching behaviors depending on the compliance current during memory operation. A switching model is proposed based on the resistance switching characteristics of the Nb2O5/NbO2-x layer on the compliance current during memory operation.

Original languageEnglish
Pages (from-to)14384-14390
Number of pages7
JournalJournal of Materials Science: Materials in Electronics
Volume31
Issue number17
DOIs
Publication statusPublished - 2020 Sep 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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