Effect of Pt top electrode deposition on the valence state and resistance switching behavior of NbO2-x

Jimin Lee; Jaeyeon Kim; Taeho Kim; Hyunchul Sohn

doi:10.1007/s10854-020-03997-1

Effect of Pt top electrode deposition on the valence state and resistance switching behavior of NbO_2-x

Jimin Lee, Jaeyeon Kim, Taeho Kim, Hyunchul Sohn

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Resistive random-access memory (ReRAM) devices for cross-point array structures require selector elements to suppress the sneak current though neighboring cells. Niobium oxide is a promising candidate for one selector-one ReRAM (1S1R) device because of its diverse electrical characteristics such as resistance threshold switching in NbO₂ and resistance memory switching in Nb₂O₅. In this study, a new method to fabricate a self-formed 1S1R device is suggested, which uses the top electrode Pt sputtering process. During the Pt sputtering of the top electrode, it was observed that the Nb⁴⁺ in NbO_2-x layer was oxidized into Nb⁵⁺, resulting in Nb₂O₅-rich films. Such self-formed Nb₂O₅/NbO_2-x layer exhibits dissimilar resistance switching behaviors depending on the compliance current during memory operation. A switching model is proposed based on the resistance switching characteristics of the Nb₂O₅/NbO_2-x layer on the compliance current during memory operation.

Original language	English
Pages (from-to)	14384-14390
Number of pages	7
Journal	Journal of Materials Science: Materials in Electronics
Volume	31
Issue number	17
DOIs	https://doi.org/10.1007/s10854-020-03997-1
Publication status	Published - 2020 Sep 1

Bibliographical note

Publisher Copyright:
© 2020, Springer Science+Business Media, LLC, part of Springer Nature.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1007/s10854-020-03997-1

Cite this

@article{109a205231174184ad5f4ca99aa8eda6,

title = "Effect of Pt top electrode deposition on the valence state and resistance switching behavior of NbO2-x",

abstract = "Resistive random-access memory (ReRAM) devices for cross-point array structures require selector elements to suppress the sneak current though neighboring cells. Niobium oxide is a promising candidate for one selector-one ReRAM (1S1R) device because of its diverse electrical characteristics such as resistance threshold switching in NbO2 and resistance memory switching in Nb2O5. In this study, a new method to fabricate a self-formed 1S1R device is suggested, which uses the top electrode Pt sputtering process. During the Pt sputtering of the top electrode, it was observed that the Nb4+ in NbO2-x layer was oxidized into Nb5+, resulting in Nb2O5-rich films. Such self-formed Nb2O5/NbO2-x layer exhibits dissimilar resistance switching behaviors depending on the compliance current during memory operation. A switching model is proposed based on the resistance switching characteristics of the Nb2O5/NbO2-x layer on the compliance current during memory operation.",

author = "Jimin Lee and Jaeyeon Kim and Taeho Kim and Hyunchul Sohn",

note = "Publisher Copyright: {\textcopyright} 2020, Springer Science+Business Media, LLC, part of Springer Nature.",

year = "2020",

month = sep,

day = "1",

doi = "10.1007/s10854-020-03997-1",

language = "English",

volume = "31",

pages = "14384--14390",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

number = "17",

}

TY - JOUR

T1 - Effect of Pt top electrode deposition on the valence state and resistance switching behavior of NbO2-x

AU - Lee, Jimin

AU - Kim, Jaeyeon

AU - Kim, Taeho

AU - Sohn, Hyunchul

PY - 2020/9/1

Y1 - 2020/9/1

N2 - Resistive random-access memory (ReRAM) devices for cross-point array structures require selector elements to suppress the sneak current though neighboring cells. Niobium oxide is a promising candidate for one selector-one ReRAM (1S1R) device because of its diverse electrical characteristics such as resistance threshold switching in NbO2 and resistance memory switching in Nb2O5. In this study, a new method to fabricate a self-formed 1S1R device is suggested, which uses the top electrode Pt sputtering process. During the Pt sputtering of the top electrode, it was observed that the Nb4+ in NbO2-x layer was oxidized into Nb5+, resulting in Nb2O5-rich films. Such self-formed Nb2O5/NbO2-x layer exhibits dissimilar resistance switching behaviors depending on the compliance current during memory operation. A switching model is proposed based on the resistance switching characteristics of the Nb2O5/NbO2-x layer on the compliance current during memory operation.

AB - Resistive random-access memory (ReRAM) devices for cross-point array structures require selector elements to suppress the sneak current though neighboring cells. Niobium oxide is a promising candidate for one selector-one ReRAM (1S1R) device because of its diverse electrical characteristics such as resistance threshold switching in NbO2 and resistance memory switching in Nb2O5. In this study, a new method to fabricate a self-formed 1S1R device is suggested, which uses the top electrode Pt sputtering process. During the Pt sputtering of the top electrode, it was observed that the Nb4+ in NbO2-x layer was oxidized into Nb5+, resulting in Nb2O5-rich films. Such self-formed Nb2O5/NbO2-x layer exhibits dissimilar resistance switching behaviors depending on the compliance current during memory operation. A switching model is proposed based on the resistance switching characteristics of the Nb2O5/NbO2-x layer on the compliance current during memory operation.

UR - http://www.scopus.com/inward/record.url?scp=85088239823&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85088239823&partnerID=8YFLogxK

U2 - 10.1007/s10854-020-03997-1

DO - 10.1007/s10854-020-03997-1

M3 - Article

AN - SCOPUS:85088239823

VL - 31

SP - 14384

EP - 14390

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

SN - 0957-4522

IS - 17

ER -