High-quality Al-doped n-type ZnO (n-ZnO:Al) epilayers have been grown by an rf-magnetron sputtering technique combined with a rapid thermal annealing (RTA) process. The electrical and optical properties of as-deposited samples are considerably improved upon annealing at 900°C for 3 min in nitrogen ambient. The improvement is attributed to the deoxidation of Al-oxides, i.e., the activation of Al dopants. The samples annealed at 900°C produce a mobility of 65.5 cm2/V·s and a carrier concentration of 1.03 × 1020 cm-3. It is also shown that the sample surface becomes significantly smoother after annealing. The results show that the RTA process effectively improves the electrical and optical properties of the Al-doped ZnO films.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics|
|Issue number||7 A|
|Publication status||Published - 2005 Jul 8|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)