Effect of reflector bias voltage on the nanocrystallization of silicon thin films by reactive particle beam assisted chemical vapor deposition

Sun Gyu Choi, Jin Nyoung Jang, Mun Pyo Hong, Kwang Ho Kwon, Hyung-Ho Park

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In the present study, the effects of reflector bias voltage on the physical and chemical properties of nanocrystalline silicon deposited by reactive particle beam assisted chemical vapor deposition were systematically studied using various reflector bias voltages. During deposition, the substrate temperature was kept at room temperature. Nanocrystalline Si embedded in an amorphous matrix structure was analyzed by X-ray diffraction and Raman spectroscopy. Films that were deposited under high reflector voltage formed large grains due to largely accumulated internal energy. Using X-ray photoelectron spectroscopy, the chemical state of nanocrystalline silicon was revealed to have only metallic Si bonds. Further, an increase in reflector voltage induced a roughened surface morphology, an increased dark conductivity, and a decreased optical band gap in Si films.

Original languageEnglish
Pages (from-to)922-925
Number of pages4
JournalJournal of the Ceramic Society of Japan
Volume119
Issue number1396
DOIs
Publication statusPublished - 2011 Jan 1

Fingerprint

Nanocrystallization
Nanocrystalline silicon
Particle beams
particle beams
Silicon
Bias voltage
reflectors
Chemical vapor deposition
vapor deposition
Thin films
Optical band gaps
Electric potential
electric potential
silicon
thin films
Chemical properties
Surface morphology
Raman spectroscopy
X ray photoelectron spectroscopy
Physical properties

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

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title = "Effect of reflector bias voltage on the nanocrystallization of silicon thin films by reactive particle beam assisted chemical vapor deposition",
abstract = "In the present study, the effects of reflector bias voltage on the physical and chemical properties of nanocrystalline silicon deposited by reactive particle beam assisted chemical vapor deposition were systematically studied using various reflector bias voltages. During deposition, the substrate temperature was kept at room temperature. Nanocrystalline Si embedded in an amorphous matrix structure was analyzed by X-ray diffraction and Raman spectroscopy. Films that were deposited under high reflector voltage formed large grains due to largely accumulated internal energy. Using X-ray photoelectron spectroscopy, the chemical state of nanocrystalline silicon was revealed to have only metallic Si bonds. Further, an increase in reflector voltage induced a roughened surface morphology, an increased dark conductivity, and a decreased optical band gap in Si films.",
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Effect of reflector bias voltage on the nanocrystallization of silicon thin films by reactive particle beam assisted chemical vapor deposition. / Choi, Sun Gyu; Jang, Jin Nyoung; Hong, Mun Pyo; Kwon, Kwang Ho; Park, Hyung-Ho.

In: Journal of the Ceramic Society of Japan, Vol. 119, No. 1396, 01.01.2011, p. 922-925.

Research output: Contribution to journalArticle

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AU - Choi, Sun Gyu

AU - Jang, Jin Nyoung

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AU - Park, Hyung-Ho

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AB - In the present study, the effects of reflector bias voltage on the physical and chemical properties of nanocrystalline silicon deposited by reactive particle beam assisted chemical vapor deposition were systematically studied using various reflector bias voltages. During deposition, the substrate temperature was kept at room temperature. Nanocrystalline Si embedded in an amorphous matrix structure was analyzed by X-ray diffraction and Raman spectroscopy. Films that were deposited under high reflector voltage formed large grains due to largely accumulated internal energy. Using X-ray photoelectron spectroscopy, the chemical state of nanocrystalline silicon was revealed to have only metallic Si bonds. Further, an increase in reflector voltage induced a roughened surface morphology, an increased dark conductivity, and a decreased optical band gap in Si films.

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