Effect of selective oxidation conditions on defect generation in gate oxide

Heung Jae Cho, Kwan Yong Lim, Se Aug Jang, Jung Ho Lee, Jae Geun Oh, Yong Soo Kim, Hong Seon Yang, Hyunchul Sohn

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We studied the effect of selective oxidation conditions on gate oxide characteristics. Selective oxidation in hydrogen-rich wet ambient at 850°C-950°C was found to generate defects both at the SiO2/Si interface and in oxide bulk, resulting in a higher stress-induced leakage current. The degradation of the device can be explained by the incorporation of hydrogen into the gate oxide during a high-temperature selective oxidation process. The plasma reoxidation process induced fewer defects due to radical oxidation at low temperature.

Original languageEnglish
Pages (from-to)1825-1828
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number4 B
DOIs
Publication statusPublished - 2004 Jan 1

Fingerprint

Oxidation
Defects
oxidation
Oxides
oxides
defects
Hydrogen
hydrogen
Leakage currents
leakage
degradation
Plasmas
Degradation
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Cho, Heung Jae ; Lim, Kwan Yong ; Jang, Se Aug ; Lee, Jung Ho ; Oh, Jae Geun ; Kim, Yong Soo ; Yang, Hong Seon ; Sohn, Hyunchul. / Effect of selective oxidation conditions on defect generation in gate oxide. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2004 ; Vol. 43, No. 4 B. pp. 1825-1828.
@article{6c2f9cd909d44b6cad60e212098d34a9,
title = "Effect of selective oxidation conditions on defect generation in gate oxide",
abstract = "We studied the effect of selective oxidation conditions on gate oxide characteristics. Selective oxidation in hydrogen-rich wet ambient at 850°C-950°C was found to generate defects both at the SiO2/Si interface and in oxide bulk, resulting in a higher stress-induced leakage current. The degradation of the device can be explained by the incorporation of hydrogen into the gate oxide during a high-temperature selective oxidation process. The plasma reoxidation process induced fewer defects due to radical oxidation at low temperature.",
author = "Cho, {Heung Jae} and Lim, {Kwan Yong} and Jang, {Se Aug} and Lee, {Jung Ho} and Oh, {Jae Geun} and Kim, {Yong Soo} and Yang, {Hong Seon} and Hyunchul Sohn",
year = "2004",
month = "1",
day = "1",
doi = "10.1143/JJAP.43.1825",
language = "English",
volume = "43",
pages = "1825--1828",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "4 B",

}

Effect of selective oxidation conditions on defect generation in gate oxide. / Cho, Heung Jae; Lim, Kwan Yong; Jang, Se Aug; Lee, Jung Ho; Oh, Jae Geun; Kim, Yong Soo; Yang, Hong Seon; Sohn, Hyunchul.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 4 B, 01.01.2004, p. 1825-1828.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of selective oxidation conditions on defect generation in gate oxide

AU - Cho, Heung Jae

AU - Lim, Kwan Yong

AU - Jang, Se Aug

AU - Lee, Jung Ho

AU - Oh, Jae Geun

AU - Kim, Yong Soo

AU - Yang, Hong Seon

AU - Sohn, Hyunchul

PY - 2004/1/1

Y1 - 2004/1/1

N2 - We studied the effect of selective oxidation conditions on gate oxide characteristics. Selective oxidation in hydrogen-rich wet ambient at 850°C-950°C was found to generate defects both at the SiO2/Si interface and in oxide bulk, resulting in a higher stress-induced leakage current. The degradation of the device can be explained by the incorporation of hydrogen into the gate oxide during a high-temperature selective oxidation process. The plasma reoxidation process induced fewer defects due to radical oxidation at low temperature.

AB - We studied the effect of selective oxidation conditions on gate oxide characteristics. Selective oxidation in hydrogen-rich wet ambient at 850°C-950°C was found to generate defects both at the SiO2/Si interface and in oxide bulk, resulting in a higher stress-induced leakage current. The degradation of the device can be explained by the incorporation of hydrogen into the gate oxide during a high-temperature selective oxidation process. The plasma reoxidation process induced fewer defects due to radical oxidation at low temperature.

UR - http://www.scopus.com/inward/record.url?scp=3142532898&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3142532898&partnerID=8YFLogxK

U2 - 10.1143/JJAP.43.1825

DO - 10.1143/JJAP.43.1825

M3 - Article

VL - 43

SP - 1825

EP - 1828

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 B

ER -