Effect of selenium doping on the crystallization behaviors of GeSb for phase-change memory applications

J. H. Kim, J. H. Park, Dae Hong Ko

Research output: Contribution to journalArticle

Abstract

We investigated the effect of Se doping on the physical and electrical properties of Ge10Sb90 films prepared by sputtering. We examined the crystal structure, chemical bonding, electrical and thermal properties, and volume shrinkage during the crystallization of Ge10Sb90 films doped concentrations of Se between 0 and 20 at.%. X-ray diffraction patterns showed that incorporating Se leads to phase separation at high Se concentrations. As the Se concentration increased, both the crystallization temperature (Tc) and the sheet resistance increased in both the amorphous and crystalline states. In contrast, the melting temperature (Tm) and grain size both decreased with the increasing Se. The volume shrinkage of the Se-doped Ge10Sb90 films was analyzed by X-ray reflectivity measurements. Our results demonstrate that Se-doped Ge10Sb90 films show a favorably low operation current and good thermal and mechanical stability, which strongly indicate their feasibility for phase-change memory applications.

Original languageEnglish
Pages (from-to)173-178
Number of pages6
JournalThin Solid Films
Volume653
DOIs
Publication statusPublished - 2018 May 1

Fingerprint

Phase change memory
Selenium
Crystallization
selenium
Doping (additives)
crystallization
shrinkage
Electric properties
electrical properties
Mechanical stability
Sheet resistance
Phase separation
Diffraction patterns
Sputtering
Melting point
Thermodynamic stability
x rays
thermal stability
diffraction patterns
Thermodynamic properties

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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abstract = "We investigated the effect of Se doping on the physical and electrical properties of Ge10Sb90 films prepared by sputtering. We examined the crystal structure, chemical bonding, electrical and thermal properties, and volume shrinkage during the crystallization of Ge10Sb90 films doped concentrations of Se between 0 and 20 at.{\%}. X-ray diffraction patterns showed that incorporating Se leads to phase separation at high Se concentrations. As the Se concentration increased, both the crystallization temperature (Tc) and the sheet resistance increased in both the amorphous and crystalline states. In contrast, the melting temperature (Tm) and grain size both decreased with the increasing Se. The volume shrinkage of the Se-doped Ge10Sb90 films was analyzed by X-ray reflectivity measurements. Our results demonstrate that Se-doped Ge10Sb90 films show a favorably low operation current and good thermal and mechanical stability, which strongly indicate their feasibility for phase-change memory applications.",
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Effect of selenium doping on the crystallization behaviors of GeSb for phase-change memory applications. / Kim, J. H.; Park, J. H.; Ko, Dae Hong.

In: Thin Solid Films, Vol. 653, 01.05.2018, p. 173-178.

Research output: Contribution to journalArticle

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