Effect of self-assembled monolayer (SAM) on the oxide semiconductor thin film transistor

Seung Hwan Cho, Yong Uk Lee, Jeong Soo Lee, Kang Moon Jo, Bo Sung Kim, Hyang Shik Kong, Jang Yeon Kwon, Min Koo Han

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In this paper, we proposed the self-assembled monolayer (SAM) as a protection layer against plasma and chemically induced damages to the back interface of an oxide semiconductor during the deposition of the passivation layer. When a thin-film transistor (TFT) is passivated with plasma-enhanced chemical-vapor deposition (PECVD) ${\hbox{SiO}} x and solution-based materials, the back interface of the oxide semiconductor could be exposed to plasma and chemically induced damages, respectively. We employed SAMs on the back surface of the oxide semiconductor prior to the passivation process to suppress such damage. The hydrophobic Cl-SAM (3- chloropropyltriethoxysilane) suppressed the degradation in mobility and subthreshold slope (SS) due to ion bombardment during plasma treatment. The hydrophobic ${\hbox{CH}} 3-SAM (octyltriethoxysilane) successfully blocked chemically induced damage due to solution-based passivation.

Original languageEnglish
Article number6080739
Pages (from-to)35-40
Number of pages6
JournalIEEE/OSA Journal of Display Technology
Volume8
Issue number1
DOIs
Publication statusPublished - 2012

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Cho, S. H., Lee, Y. U., Lee, J. S., Jo, K. M., Kim, B. S., Kong, H. S., Kwon, J. Y., & Han, M. K. (2012). Effect of self-assembled monolayer (SAM) on the oxide semiconductor thin film transistor. IEEE/OSA Journal of Display Technology, 8(1), 35-40. [6080739]. https://doi.org/10.1109/JDT.2011.2169936