Effect of Si in reactively sputtered Ti-Si-N films on structure and diffusion barrier performance

X. Sun, E. Kolawa, Seongil Im, C. Garland, M. A. Nicolet

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

Two ternary films about 100 nm thick, Ti34Si23N43 (b3) and Ti35Si13N52 (c3), are synthesized by reactively sputtering a Ti5Si3 or a Ti3Si target, respectively. The silicon-lean film (c3) has a columnar structure closely resembling that of TiN. As a diffusion barrier between a shallow Si n+p junction diode and a Cu overlayer, this material is effective up to 700°C for 30 min annealing in vacuum, a performance similar to that for TiN. The silicon-rich (b3) film contains nanocrystals of TiN, randomly oriented and embedded in an amorphous matrix. A film of (b3) maintains the stability of the same diode structure up to 850°C for 30 min in vacuum. This film (b3) is clearly superior to TiN or to (c3). Similar experiments performed with Al instead of Cu overlayers highlight the importance of the thermodynamic stability of a barrier layer and demonstrate convincingly that for stable barriers the microstructure is a parameter that directly determines the barrier performance.

Original languageEnglish
Pages (from-to)43-45
Number of pages3
JournalApplied Physics A: Materials Science and Processing
Volume65
Issue number1
DOIs
Publication statusPublished - 1997 Jan 1

Fingerprint

Diffusion barriers
Silicon
Diodes
Vacuum
Nanocrystals
Sputtering
Thermodynamic stability
Annealing
Microstructure
Experiments

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

Cite this

@article{a129cc5dbf8d49ad886cdb3209e77239,
title = "Effect of Si in reactively sputtered Ti-Si-N films on structure and diffusion barrier performance",
abstract = "Two ternary films about 100 nm thick, Ti34Si23N43 (b3) and Ti35Si13N52 (c3), are synthesized by reactively sputtering a Ti5Si3 or a Ti3Si target, respectively. The silicon-lean film (c3) has a columnar structure closely resembling that of TiN. As a diffusion barrier between a shallow Si n+p junction diode and a Cu overlayer, this material is effective up to 700°C for 30 min annealing in vacuum, a performance similar to that for TiN. The silicon-rich (b3) film contains nanocrystals of TiN, randomly oriented and embedded in an amorphous matrix. A film of (b3) maintains the stability of the same diode structure up to 850°C for 30 min in vacuum. This film (b3) is clearly superior to TiN or to (c3). Similar experiments performed with Al instead of Cu overlayers highlight the importance of the thermodynamic stability of a barrier layer and demonstrate convincingly that for stable barriers the microstructure is a parameter that directly determines the barrier performance.",
author = "X. Sun and E. Kolawa and Seongil Im and C. Garland and Nicolet, {M. A.}",
year = "1997",
month = "1",
day = "1",
doi = "10.1007/s003390050539",
language = "English",
volume = "65",
pages = "43--45",
journal = "Applied Physics",
issn = "0340-3793",
publisher = "Springer Heidelberg",
number = "1",

}

Effect of Si in reactively sputtered Ti-Si-N films on structure and diffusion barrier performance. / Sun, X.; Kolawa, E.; Im, Seongil; Garland, C.; Nicolet, M. A.

In: Applied Physics A: Materials Science and Processing, Vol. 65, No. 1, 01.01.1997, p. 43-45.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of Si in reactively sputtered Ti-Si-N films on structure and diffusion barrier performance

AU - Sun, X.

AU - Kolawa, E.

AU - Im, Seongil

AU - Garland, C.

AU - Nicolet, M. A.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - Two ternary films about 100 nm thick, Ti34Si23N43 (b3) and Ti35Si13N52 (c3), are synthesized by reactively sputtering a Ti5Si3 or a Ti3Si target, respectively. The silicon-lean film (c3) has a columnar structure closely resembling that of TiN. As a diffusion barrier between a shallow Si n+p junction diode and a Cu overlayer, this material is effective up to 700°C for 30 min annealing in vacuum, a performance similar to that for TiN. The silicon-rich (b3) film contains nanocrystals of TiN, randomly oriented and embedded in an amorphous matrix. A film of (b3) maintains the stability of the same diode structure up to 850°C for 30 min in vacuum. This film (b3) is clearly superior to TiN or to (c3). Similar experiments performed with Al instead of Cu overlayers highlight the importance of the thermodynamic stability of a barrier layer and demonstrate convincingly that for stable barriers the microstructure is a parameter that directly determines the barrier performance.

AB - Two ternary films about 100 nm thick, Ti34Si23N43 (b3) and Ti35Si13N52 (c3), are synthesized by reactively sputtering a Ti5Si3 or a Ti3Si target, respectively. The silicon-lean film (c3) has a columnar structure closely resembling that of TiN. As a diffusion barrier between a shallow Si n+p junction diode and a Cu overlayer, this material is effective up to 700°C for 30 min annealing in vacuum, a performance similar to that for TiN. The silicon-rich (b3) film contains nanocrystals of TiN, randomly oriented and embedded in an amorphous matrix. A film of (b3) maintains the stability of the same diode structure up to 850°C for 30 min in vacuum. This film (b3) is clearly superior to TiN or to (c3). Similar experiments performed with Al instead of Cu overlayers highlight the importance of the thermodynamic stability of a barrier layer and demonstrate convincingly that for stable barriers the microstructure is a parameter that directly determines the barrier performance.

UR - http://www.scopus.com/inward/record.url?scp=0031186896&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031186896&partnerID=8YFLogxK

U2 - 10.1007/s003390050539

DO - 10.1007/s003390050539

M3 - Article

AN - SCOPUS:0031186896

VL - 65

SP - 43

EP - 45

JO - Applied Physics

JF - Applied Physics

SN - 0340-3793

IS - 1

ER -